MJ3055 |
Part Number | MJ3055 |
Manufacturer | Inchange Semiconductor |
Description | ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device performance an... |
Features |
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A
VBE(on) Base-Emitter On Voltage
IC= 4A ; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 30V; IB=0
ICBO
Collector Cutoff Current
VCE= 100V; IE=0,TC=150℃
IEBO
Emitter Cutoff Current
VEB= 7.0V; IC=0
hFE-1
DC Current Gain
IC= 4A ; VCE= 4V
hFE-2 Is/b fT
DC Current Gain
Second Breakdown Collector Current with Base Forward Biased
Current Gain-Bandwidth Product
IC= 10A ; V... |
Document |
MJ3055 Data Sheet
PDF 206.86KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | MJ3055 |
Seme LAB |
Bipolar NPN Device | |
2 | MJ3000 |
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10 AMPERE DARLINGTON POWER TRANSISTORS | |
3 | MJ3000 |
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4 | MJ3000 |
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5 | MJ3000 |
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6 | MJ3000 |
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7 | MJ3000 |
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8 | MJ3000 |
DIGITRON |
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9 | MJ3000 |
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10 | MJ3001 |
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