MJ3055 Inchange Semiconductor Silicon NPN Power Transistor Datasheet. existencias, precio

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MJ3055

Inchange Semiconductor
MJ3055
MJ3055 MJ3055
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Part Number MJ3055
Manufacturer Inchange Semiconductor
Description ·Excellent Safe Operating Area ·DC Current Gain-hFE=20-70@IC = 4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.1 V(Max)@ IC = 4A ·Minimum Lot-to-Lot variations for robust device performance an...
Features PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=50mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 3.3A VBE(on) Base-Emitter On Voltage IC= 4A ; VCE= 4V ICEO Collector Cutoff Current VCE= 30V; IB=0 ICBO Collector Cutoff Current VCE= 100V; IE=0,TC=150℃ IEBO Emitter Cutoff Current VEB= 7.0V; IC=0 hFE-1 DC Current Gain IC= 4A ; VCE= 4V hFE-2 Is/b fT DC Current Gain Second Breakdown Collector Current with Base Forward Biased Current Gain-Bandwidth Product IC= 10A ; V...

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