| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi Semiconductor |
Silicon P-Channel MOS FET • • • • High speed switching Good frequency characteristics Wide area of safe operation Suitable for switching regulator, DC-DC converter and ultrasonic power oscillators. Outline TO-220AB D 1 2 3 1. Gate 2. Drain (Flange) 3. Source G S 2SJ1 |
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Hitachi Semiconductor |
2SJ114 |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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Fairchild Semiconductor |
N-Channel Switch GSS IGSS VGS(off) Gate-Source Breakdwon Voltage Gate Reverse Current Gate-Source Cutoff Voltage IG = -10µA, VDS = 0 VGS = -15V, VDS = 0 VGS = -15V, VDS = 0, TA = 100°C VDS = 15V, ID = 10nA 108 109 110 On Characteristics IDSS Zero-Gate Voltag |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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Fairchild Semiconductor |
N-Channel Switch • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51 • Source & Drain are interchangeable. G SD TO-92 Figure 1. J111 / J112 / J113 Device Package Ordering |
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First Semiconductor |
SMD Transient Voltage Suppressor • 3000W peak pulse power capability with a 10/1000 us waveform, repetition rate(duty cycle): 0.01%. • Excellent clamping capability. • Low incremental surge resistance. • Fast response time from 0V to VBR, typically less than 1 ps for uni-directional |
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Hitachi Semiconductor |
SILICON P-CHANNEL MOS FET |
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ON Semiconductor |
N-Channel Switch • This Device is Designed for Low Level Analog Switching, Sample and Hold Circuits and Chopper Stabilized Amplifiers • Sourced from Process 51 • Source & Drain are Interchangeable • These are Pb−Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25°C unles |
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Taiwan Semiconductor |
Surface Mount Transient Voltage Suppressor For surface mounted application Low profile package Built-in strain relief Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps from 0 volt to BV min. Typical IR less than 1μA above 10V High temperatur |
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ON Semiconductor |
N-Channel Switch • This Device is Designed for Low Level Analog Switching, Sample and Hold Circuits and Chopper Stabilized Amplifiers • Sourced from Process 51 • Source & Drain are Interchangeable • These are Pb−Free Devices ABSOLUTE MAXIMUM RATINGS (TA = 25°C unles |
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Taiwan Semiconductor |
Transient Voltage Suppressor ● AEC-Q101 qualified ● Low profile package ● Ideal for automated placement ● Glass passivated junction ● Excellent clamping capability ● Fast response time: Typically less than 1.0ps ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Moisture sensitivity lev |
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UN Semiconductor |
Surface Mount Transient Voltage Suppressors |
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Diotec Semiconductor |
SMD Transient Voltage Suppressor Diodes Besonderheiten Uni- and Bidirectional versions Uni- und Bidirektionale Versionen Peak pulse power of 400 W 400 W Impuls-Verlustleistung (10/1000 µs waveform) (10/1000 µs Strom-Impuls) Very fast response time Sehr schnelle Ansprechzeit Furth |
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Fairchild Semiconductor |
N-Channel Switch • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51 • Source & Drain are interchangeable. G SD TO-92 Figure 1. J111 / J112 / J113 Device Package Ordering |
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Fairchild Semiconductor |
N-Channel Switch • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51 • Source & Drain are interchangeable. G SD TO-92 Figure 1. J111 / J112 / J113 Device Package Ordering |
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Fairchild Semiconductor |
600 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 600 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV minimum for Unidirectional and |
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Fairchild Semiconductor |
600 Watt Transient Voltage Suppressors • Glass-Passivated Junction • 600 W Peak Pulse Power Capability on 10/1000 μs Waveform. • Excellent Clamping Capability • Low-Incremental Surge Resistance • Fast Response Time: Typically Less than 1.0 ps from 0 V to BV minimum for Unidirectional and |
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ON Semiconductor |
JFET - General Purpose N-Channel http://onsemi.com 1 DRAIN • • • • • • • • N−Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low RDS(on) < 18 W Fast Switching td(on) + tr = 8.0 ns (Typ) Low Noise en = 6.0 nV/√Hz @ 10 Hz (T |
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Desde 2024. D4U Semiconductor.
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