ON Semiconductor FUS Hoja de datos

No.	parte #	Fabricante	Descripción
1	D1559	Hitachi Semiconductor	Silicon NPN Triple Diffused Transistor tage I CBO I CEO hFE VCE(sat)1 — — — — 1000 — — — Base to emitter saturatiopn VBE(sat)1 — — voltage Collector to emitter saturation VCE(sat)2 — — voltage Base to emitter saturation VBE(sat)2 — — voltage Turn on time Storage time
2	J6810	Fairchild Semiconductor	NPN Triple Diffused Planar Silicon Transistor -Emitter Saturation Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=500µA, IC=0 VCE=5V, IC=1A VCE=5V, IC=6A IC=6A, IB=1.5A IC=6A, IB=1.5A VCC=200V, IC=6A, RL=33Ω IB1=1.2A, IB2= - 2.4A 6 10 5 8 3 1.5 3 0.
3	C4161	Sanyo Semiconductor Corporation	NPN Triple Diffused Planar Silicon Transistor · High breakdown voltage, high reliability. · High-speed switching (tf=0.1µs typ). · Wide ASO. · Adoption of MBIT process. · Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SC4161] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18
4	D1541	Panasonic Semiconductor	Si NPN Diffused Junction Mesa Type Transistor
5	FUSB300C	Fairchild Semiconductor	Programmable USB Type-C Controller  Type-C Detection of Attach and Orientation  Flexible Multi-Platform Support through I2C Programmability  Supports: - Dual Role Port (DRP) - Downstream Facing Port (DFP) - Upstream Facing Port (UFP) - Accessory Modes - Alternate Interfaces Applica
6	2SB1011	Panasonic Semiconductor	Silicon PNP triple diffusion planar type Transistor • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) φ 3.16±0.1 3.8±0.3 11.0±0.5 1.9±0.1 ■ Absolute Maximum
7	2SD2530	Panasonic Semiconductor	Silicon NPN triple diffusion planer type Transistor • High forward current transfer ratio hFE • Allowing supply with the radial taping • Low collector to emitter saturation voltage VCE(sat): < 2.5 V 2.5±0.1 1.2±0.1 1.48±0.2 90° C 1.0 2.25±0.2 18.0±0.5 Solder Dip 0.65±0.1 0.65±0.1 0.35±0.1 1.05±0
8	VR4J	Toshiba Semiconductor	TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery) t V mA ms °C/W Note1: Soldering: 5 mm is the minimum to be kept between case and soldering part. Note2: Lead bending: 5 mm is the minimum to be kept from the case when bend the lead wire. Marking Type Code Lot No. Code VR 4J Month (starting from al
9	2SD1262	Panasonic Semiconductor	Silicon NPN triple diffusion Transistor q q q High foward current transfer ratio hFE High-speed switching N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment. (TC=25˚C) Ratings 60 80 60 80 7 12 8 45 1.3 150 –55 to
10	2SA1384	Toshiba Semiconductor	SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR
11	2SD2539	Toshiba Semiconductor	NPN Triple Diffused Planar Silicon Transistor rward Voltage (Damper Diode) Transition Frequency Collector Output Capacitance Switching Time Storage Time Fall Time SYMBOL TEST CONDITION ICBO IEBO V (BR) EBO hFE (1) hFE (2) VCE (sat) VBE (sat) VCB = 1500 V, IE = 0 VEB = 5 V, IC = 0 IC = 40
12	D1525	Toshiba Semiconductor	NPN TRIPLE DIFFUSED TYPE TRANSISTOR r saturation voltage Emitter-collector forward voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) VECF fT Cob VCB = 100 V, IE = 0 VEB = 5 V, IC = 0 IC = 50 mA,
13	L50S15	Littelfuse	Semiconductor Fuses telfuse-developed technology that sets tomorrow’s standards for accuracy, consistent quality, reliability, and predictable performance. By using advanced metallurgical, polymer, and materials research; mathematical modeling, and computerized statisti
14	Q62702-A961	Siemens Semiconductor Group	Silicon Schottky Diodes (For low-loss/ fast-recovery/ meter protection/ bias isolation and clamping applications Integrated diffused guard ring)
15	F10JZ47	Toshiba Semiconductor	SILICON DIFFUSED TYPE THYRISTOR
16	A50QS600-4	Ferraz Shawmut	SEMICONDUCTOR PROTECTION FUSES – lower I2t to provide better protection for equipment, longer life when subjected to cyclic loading and lower watts loss. A50QS is today’s best choice for the protection of dynamic solid state equipment such as motor drives, inverters, UPS, etc. Rat
17	C4002	ON Semiconductor	NPN Triple Diffused Planar Silicon Transistor • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector
18	L50S125	Littelfuse	Semiconductor Fuses telfuse-developed technology that sets tomorrow’s standards for accuracy, consistent quality, reliability, and predictable performance. By using advanced metallurgical, polymer, and materials research; mathematical modeling, and computerized statisti
19	L50S40	Littelfuse	Semiconductor Fuses telfuse-developed technology that sets tomorrow’s standards for accuracy, consistent quality, reliability, and predictable performance. By using advanced metallurgical, polymer, and materials research; mathematical modeling, and computerized statisti
20	L50S400	Littelfuse	Semiconductor Fuses telfuse-developed technology that sets tomorrow’s standards for accuracy, consistent quality, reliability, and predictable performance. By using advanced metallurgical, polymer, and materials research; mathematical modeling, and computerized statisti