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| Part Number | 2SB1011 |
| Manufacturer | Panasonic Semiconductor |
| Description | Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features • High collector-base voltage (Emitter open) VCBO ... |
| Features |
• High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) φ 3.16±0.1 3.8±0.3 11.0±0.5 1.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating −400 −400 −5 −100 −200 1.2 150 −55 to +150 Unit V ... |
| Document |
 2SB1011 Data Sheet
PDF 87.25KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1010 |
Rohm |
PNP Silicon Transistor |
|
| 2 | 2SB1012 |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 3 | 2SB1012K |
Hitachi Semiconductor |
Silicon PNP Epitaxial Transistor |
|
| 4 | 2SB1015 |
Toshiba Semiconductor |
Silicon PNP Transistor |
|
| 5 | 2SB1015 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB1015 |
INCHANGE |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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