ON Semiconductor FGB Hoja de datos

No.	parte #	Fabricante	Descripción
1	AFGB40T65SQDN	ON Semiconductor	IGBT • Maximum Junction Temperature: TJ = 175°C • High Speed Switching Series • VCE(sat) = 1.6 V (Typ.) @ IC = 40 A • 100% of the Part are Dynamically Tested (Note 1) • AEC−Q101 Qualified • These Devices are Pb−Free and are RoHS Compliant Typical Applicat
2	FGB3040CS	Fairchild Semiconductor	N-Channel Ignition IGBT SCIS Energy = 300mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Package Symbol Device Maximum Ratings TA = 25°C unless otherwi
3	FGB3040G2_F085	Fairchild Semiconductor	N-Channel Ignition IGBT SCIS Energy = 300mJ at TJ = 25oC Logic Level Gate Drive Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications Qualified to AEC Q101 RoHS Compliant Package JEDEC TO-263AB D²-Pak JEDEC TO-220AB E CG Symbol G
4	FGB3245G2_F085	Fairchild Semiconductor	N-Channel Ignition IGBT SCIS Energy = 320mJ at TJ = 25oC Logic Level Gate Drive Low Saturation Voltage Qualified to AEC Q101 RoHS Compliant Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications General Description The FGB3245G2_F085
5	FGBS3040E1_F085	Fairchild Semiconductor	Integrated Smart Ignition Coil Driver  400V 300mJ N Channel Ignition IGBT  Control Input buffering  Input spike filter of typical 13us  Operation from Ignition or Battery line  Ground shift tolerance +/- 1.5V  Programmable maximum dwell time  Current programmable bidirectional Inp
6	FGB3245G2-F085	ON Semiconductor	N-Channel IGBT
7	FGB20N60SFD	Fairchild Semiconductor	IGBT • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A • High Input Impedance • Fast Switching : EOFF = 8 uJ/A • RoHS Compliant Applications • Solar Inverter, UPS, Welder, PFC General Description Using novel field stop IGBT
8	FGB20N6S2	Fairchild Semiconductor	600V/ SMPS II Series N-Channel IGBT • 100kHz Operation at 390V, 7A • 200kHZ Operation at 390V, 5A • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . 85ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 30nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . . .
9	FGB30N6S2	Fairchild Semiconductor	600V/ SMPS II Series N-Channel IGBT • 100kHz Operation at 390V, 14A • 200kHZ Operation at 390V, 9A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 23nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . .
10	FGB30N6S2D	Fairchild Semiconductor	600V/ SMPS II Series N-Channel IGBT • 100kHz Operation at 390V, 14A • 200kHZ Operation at 390V, 9A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 90ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 23nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . .
11	FGB20N60SFD_F085	Fairchild Semiconductor	20A Field Stop IGBT • High current capability • Low saturation voltage: VCE(sat) = 2.2V @ IC = 20A • High input impedance • Fast switching • Qualified to Automotive Requirements of AEC-Q101 • RoHS complaint Applications • Inverters, SMPS, PFC, UPS • Automotive Chargers,
12	FGB3040G2-F085	ON Semiconductor	N-Channel IGBT • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • Coil On Plug Applications SYMBOL COLLECT
13	FGB3056-F085	ON Semiconductor	N-Channel IGBT SCIS Energy = 300mJ at TJ = 25oC Logic Level Gate Drive Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications Package JEDEC TO-263AB D2-Pak GATE EMITTER COLLECTOR (FLANGE) Absolute Maximum Ratings TA = 25°C unle
14	FGB3040CS	ON Semiconductor	N-Channel IGBT SCIS Energy = 300mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Package Symbol Device Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BVCER Collector to Emitter Breakdown Voltage (IC = 2mA)
15	FGB3236-F085	ON Semiconductor	IGBT • Industry Standard D2PAK Package • SCIS Energy = 330 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • Coil On Plug Applications MAXIMUM RATING
16	FGB7N60UNDF	Fairchild Semiconductor	IGBT • Short Circuit Rated 10 us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant Applications • Sewing Machine, CNC, Home Appliances, Motor Control General Description Using advanced NPT IGBT technology, Fairchild’s the
17	FGB5N60UNDF	Fairchild Semiconductor	IGBT • Short Circuit Rated 10 us • High Current Capability • High Input Impedance • Fast Switching • RoHS Compliant Applications • Sewing Machine, CNC, Home Appliances, Motor Control September 2013 General Description Using advanced NPT IGBT technology,
18	FGB3236_F085	Fairchild Semiconductor	N-Channel Ignition IGBT Industry Standard D2-Pak package SCIS Energy = 320mJ at TJ = 25oC Logic Level Gate Drive Qualified to AEC Q101 RoHS Compliant Applications Automotive lgnition Coil Driver Circuits Coil On Plug Applications Package GATE EMITTER COLL
19	FGB20N6S2D	Fairchild Semiconductor	600V/ SMPS II Series N-Channel IGBT • 100kHz Operation at 390V, 7A • 200kHZ Operation at 390V, 5A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 30nC at VGE = 15V • Low Plateau Voltage . . . . . . . . . .
20	FGB40N6S2	Fairchild Semiconductor	600V/ SMPS II Series N-Channel IGBT • 100kHz Operation at 390V, 24A • 200kHZ Operation at 390V, 18A • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . 85ns at TJ = 125oC • Low Gate Charge . . . . . . . . . 35nC at VGE = 15V • Low Plateau Voltage . . . . . . . . .