| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Fairchild Semiconductor |
FDW9926A • 4.5 A, 20 V. RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 45 mΩ @ VGS = 2.5 V • Optimized for use in battery circuit applications • Extended VGSS range (±10V) for battery applications • High performance trench technology for extremely low RDS(ON) • |
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Fairchild Semiconductor |
Common Drain N-Channel 2.5V Specified PowerTrench MOSFET • 7.1 A, 20 V. RDS(ON) = 20 mΩ @ VGS = 4.5 V RDS(ON) = 26 mΩ @ VGS = 2.5 V Extended VGSS range (±12V) for battery applications ESD protection diode (note 3) High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package • • |
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Fairchild Semiconductor |
Common Drain N-Channel 2.5V specified PowerTrench MOSFET • 5.8 A, 20 V RDS(ON) = 28 mΩ @ VGS = 4.5 V RDS(ON) = 38 mΩ @ VGS = 2.5 V • Extended VGSS range (±12V) for battery applications • ESD protection diode (note 3) • High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V • Low profil |
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Fairchild Semiconductor |
P-Channel 2.5V Specified PowerTrench MOSFET • –9.7 A, –20 V. RDS(ON) = 10.0 mΩ @ VGS = –4.5 V RDS(ON) = 14.5 mΩ @ VGS = –2.5 V • Extended VGSS range (±12V) for battery applications • • Low gate charge High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package A |
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Fairchild Semiconductor |
Dual N-Channel MOSFET • 5.5 A, 20 V. RDS(ON) = 20 mΩ @ V GS = 4.5V RDS(ON) = 26 mΩ @ V GS = 2.5V • Extended V GSS range (±12V) for battery applications • ESD protection diode (note 3) • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 pa |
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Fairchild Semiconductor |
Dual N-Channel MOSFET ! 7.1A, 20V rDS(ON) =0.020Ω, VGS = 4.5V rDS(ON) =0.025Ω, VGS = 2.5V ! Extended VGS range (±12 V) for battery applications ! HBM ESD Protection Level of 3.5kV Typical (note 3) ! High performance trench technology for extremely low rDS(ON) ! Low profil |
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Fairchild Semiconductor |
Dual N-Channel MOSFET ! 6A, 20V rDS(ON) = 0.028Ω, VGS = 4.5V rDS(ON) = 0.036Ω, VGS = 2.5V ! Extended VGS range (±12 V) for battery applications ! HBM ESD Protection Level of 3.5kV Typical (note 3) ! High performance trench technology for extremely low rDS(ON) ! Low profil |
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ON Semiconductor |
N-Channel Power MOSFET Typical RDS(on) = 5.0 mΩ at VGS = 10V, ID = 20 A Typical Qg(tot) = 29 nC at VGS = 10V, ID = 20 A UIS Capability RoHS Compliant Qualified to AEC Q101 Wettable flanks for automatic optical inspection (AOI) Applications Automotive Engine |
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ON Semiconductor |
N-Channel Power MOSFET Typ rDS(on) = 6.5mΩ at VGS = 10V, ID = 60A Typ Qg(tot) = 64nC at VGS = 10V, ID = 60A UIS Capability RoHS Compliant Qualified to AEC Q101 Wettable flanks for automatic optical inspection (AOI) Applications Automotive Engine Control Pow |
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Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET • 6 A, 20 V. RDS(ON) = 0.018 Ω @ VGS = 4.5V RDS(ON) = 0.028 Ω @ VGS = 2.5V • Extended VGSS range (±12V) for battery applications. • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package Applications • Load switch |
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Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET • 6 A, 20 V. RDS(ON) = 0.018 Ω @ V GS = 4.5V RDS(ON) = 0.028 Ω @ V GS = 2.5V • Extended V GSS range (±12V) for battery applications. • ESD protection diode (note 3). • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP- |
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Fairchild Semiconductor |
Dual P-Channel 2.5V Specified PowerTrench MOSFET • –4.4 A, –20 V. RDS(ON) = 0.035 Ω @ VGS = –4.5 V RDS(ON) = 0.057 Ω @ VGS = –2.5 V. • Extended VGSS range (±12V) for battery applications. • High performance trench technology for extremely low RDS(ON) . • Low profile TSSOP-8 package. Applications • |
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Fairchild Semiconductor |
Dual P-Channel 2.5V Specified PowerTrench MOSFET • –4.4 A, –20 V. RDS(ON) = 0.035 Ω @ V GS = –4.5 V RDS(ON) = 0.057 Ω @ V GS = –2.5 V. • Extended V GSS range (±12V) for battery applications. • ESD protection diode (note 3). • High performance trench technology for extremely low RDS(ON) . • Low prof |
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Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET • 5.5 A, 20 V. RDS(ON) = 0.021 Ω @ VGS = 4.5 V RDS(ON) = 0.035 Ω @ VGS = 2.5 V • Extended VGSS range (±12V) for battery applications • Low gate charge • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package Appl |
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Fairchild Semiconductor |
Dual P-Channel 2.5V Specified PowerTrench MOSFET • –3.8 A, –20 V, RDS(ON) = 0.043 Ω @ VGS = –4.5 V RDS(ON) = 0.070 Ω @ VGS = –2.5V • Extended VGSS range (±12V) for battery applications • Low gate charge • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package Ap |
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Fairchild Semiconductor |
Dual P-Channel 2.5V Specified PowerTrench MOSFET • –5.3 A, –20 V, RDS(ON) = 0.022 Ω @ VGS = –4.5 V. RDS(ON) = 0.033 Ω @ VGS = –2.5V. • Extended VGSS range (±12V) for battery applications • Low gate charge • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package |
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Fairchild Semiconductor |
Common Drain N-Channel 2.5V specified PowerTrench MOSFET • 7.5 A, 20 V. RDS(ON) = 19 mΩ @ VGS = 4.5 V RDS(ON) = 23 mΩ @ VGS = 2.5 V • Isolated source and drain pins • High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V • Low profile TSSOP-8 package Applications • Li-Ion Battery Pac |
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Fairchild Semiconductor |
Common Drain N-Channel 2.5V specified PowerTrench MOSFET • 7.5 A, 20 V RDS(ON) = 19 mΩ @ VGS = 4.5 V RDS(ON) = 23 mΩ @ VGS = 2.5 V • Isolated source and drain pins • ESD protection diode (note 3) • High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V • Low profile TSSOP-8 package Ap |
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Fairchild Semiconductor |
Dual P-Channel 1.8 V Specified PowerTrench MOSFET • –6 A, –12 V. RDS(ON) = 18 mΩ @ VGS = –4.5 V RDS(ON) = 22 mΩ @ VGS = –2.5 V RDS(ON) = 30 mΩ @ VGS = –1.8 V Low gate charge(26nC typical) High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package Applications • • • Pow |
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Fairchild Semiconductor |
Common Drain N-Channel 2.5V specified PowerTrench MOSFET • 5.8 A, 20 V RDS(ON) = 28 mΩ @ VGS = 4.5 V RDS(ON) = 38 mΩ @ VGS = 2.5 V • Extended VGSS range (±12V) for battery applications • ESD protection diode (note 3) • High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V • Low profil |
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Desde 2024. D4U Semiconductor.
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