FDW2503NZ |
Part Number | FDW2503NZ |
Manufacturer | Fairchild Semiconductor |
Description | This N -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Features • 5.5 A, 20 V. RDS(ON) = 20 mΩ @ V GS = 4.5V RDS(ON) = 26 mΩ @ V GS = 2.5V • Extended V GSS range (±12V) for battery . |
Features |
• 5.5 A, 20 V. RDS(ON) = 20 mΩ @ V GS = 4.5V RDS(ON) = 26 mΩ @ V GS = 2.5V • Extended V GSS range (±12V) for battery applications • ESD protection diode (note 3) • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package Applications • Load switch • Motor drive • DC/DC conversion • Power management 1 2 3 4 8 7 6 5 Absolute Maximum Ratings Symbol V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 20 ±12 (Note 1a) Units V V A W °C 5.. |
Datasheet |
FDW2503NZ Data Sheet
PDF 66.41KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | FDW2503N |
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Dual N-Channel 2.5V Specified PowerTrench MOSFET | |
2 | FDW2501N |
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Dual N-Channel 2.5V Specified PowerTrench MOSFET | |
3 | FDW2501NZ |
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Dual N-Channel 2.5V Specified PowerTrench MOSFET | |
4 | FDW2502P |
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5 | FDW2502PZ |
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6 | FDW2504P |
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7 | FDW2506P |
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8 | FDW2507N |
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9 | FDW2507NZ |
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10 | FDW2508P |
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