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Alpha & Omega Semiconductors |
150V N-Channel MOSFET 0 2.5 1.6 -55 to 175 S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 16 41 1.2 Max 20 50 1.5 Units V V A A A mJ W |
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Hitachi Semiconductor |
LCD Driver with 80-Channel Outputs |
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ON Semiconductor |
Complementary Silicon Power Transistors ÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMaximum Lead Temperature for Sold |
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ON Semiconductor |
Complementary Silicon Power Transistors • Low Collector−Emitter Saturation Voltage • Fast Switching Speeds • Complementary Pairs Simplifies Designs • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage D44H8, D45H8 D44H1 |
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Inchange Semiconductor |
Silicon NPN Power Transistor ance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors D44C1 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN |
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Central Semiconductor Corp |
COMPLEMENTARY SILICON |
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Mospec Semiconductor |
Power Transistors |
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Hitachi Semiconductor |
(HD44860 / HD44868) Microcontroller |
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ON Semiconductor |
PNP Transistor • Pb−Free Packages are Available* http://onsemi.com 4.0 AMP POWER TRANSISTORS PNP SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎMAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating Symbol Value Unit Collector−Emitter Voltage BD436 BD438 BD440 BD442 VCEO 32 45 60 80 Vdc |
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Mospec Semiconductor |
Power Transistors |
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General Semiconductor |
Small Signal Diodes ♦ Silicon Epitaxial Planar Diodes Top View .056 (1.43) .052 (1.33) ♦ Fast switching diode in case SOT-23, especially suited for automatic insertion. ♦ This diode is also available in other case styles including: the DO-35 case with the type designa |
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Central Semiconductor |
SILICON NPN POWER TRANSISTORS EO IC=100mA (D44C10, 11, 12) 80 VCE(SAT) IC=1.0A, IB=50mA (D44C2, 3, 5, 6, 8, 9, 11, 12) VCE(SAT) VBE(SAT) Cob fT td+tr ts tf IC=1.0A, IB=100mA (D44C1, 4, 7, 10) IC=1.0A, IB=100mA VCB=10V, IE=0, f=1.0MHz VCE=4.0V, IC=20mA IC=1.0A, IB1=100mA IC= |
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Inchange Semiconductor |
Silicon NPN Power Transistor stance, Junction to Case MAX UNIT 4.2 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors D44C10 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS M |
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Hitachi Semiconductor |
CMOS 4-bit SINGLE CHIP |
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Hitachi Semiconductor |
Dot Matrix Liquid Crystal Graphic Display Common Driver • Dot matrix graphic display common driver including the timing generation circuit • Internal oscillator (oscillation frequency is selectable by attaching an oscillation resistor and an oscillation capacitor) • Generates display timing signals • 32-b |
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Motorola Semiconductor |
(D44VH1 - D44VH10) Complementary Silicon Power Transistors |
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ON Semiconductor |
Complementary Silicon Power Transistors ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol VCEO VCEV VEB IC ICM PD Value 80 Unit Vdc Vdc Vdc Adc Collector−Emitter Voltage Collector−Emitter Voltage Emitter Base Voltage 100 7.0 15 20 Collector Current − |
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Alpha & Omega Semiconductors |
60V N-Channel MOSFET VDS (V) = 60V ID = 12 A RDS(ON) < 60 mΩ (VGS = 10V) RDS(ON) < 85 mΩ (VGS = 4.5V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Ga |
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Fairchild Semiconductor |
(MSD4110C - MSD4940C) TWO DIGIT STICK DISPLAY the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairch |
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Hitachi Semiconductor |
SYNC SIGNAL GENERATOR |
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Desde 2024. D4U Semiconductor.
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