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D44C10 Inchange Semiconductor Silicon NPN Power Transistor Datasheet

D44C10 TO 220 4 Amp Silicon Transistor | Solid State Manufacturing D44C10


Inchange Semiconductor
D44C10
Part Number D44C10
Manufacturer Inchange Semiconductor
Description ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D45C10 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for various specific and general purpose application such as: output and driver stages of ampli...
Features stance, Junction to Case MAX UNIT 4.2 ℃/W isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors D44C10 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 100mA 0.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 100mA 1.3 V ICES Collector Cutoff Current VCE= 90V, VBE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 μA hFE-1 DC Current Gain IC= 0.2A; VCE= 1V 25 hFE-2 DC Current Gain IC= 1A; V...

Document Datasheet D44C10 datasheet pdf (208.22KB)
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