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D44C10 |
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| Part Number | D44C10 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Saturation Voltage ·Good Linearity of hFE ·Fast Switching Speeds ·Complement to Type D45C10 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desi... |
| Features |
stance, Junction to Case
MAX UNIT 4.2 ℃/W
isc website：www.iscsemi.cn
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isc Silicon NPN Power Transistors
D44C10
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 100mA
0.5
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 100mA
1.3
V
ICES
Collector Cutoff Current
VCE= 90V, VBE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
100 μA
hFE-1
DC Current Gain
IC= 0.2A; VCE= 1V
25
hFE-2
DC Current Gain
IC= 1A; V... |
| Document |
 D44C10 Data Sheet
PDF 208.22KB |
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Desde 2024. D4U Semiconductor.
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