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Inchange Semiconductor |
Silicon NPN Power Transistor CAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation V |
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Shenzhen SI Semiconductors |
BUL SERIES TRANSISTORS ■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ●: ●APPLICATION: ■FLUORESCENT LAMP ●（Tc=25°C） ●Absolute Maximum Ratings（Tc=25°C） PARAMETER - Collector-Base Voltage - Collector-Emitter Voltage - Emitter- Base Voltage Collector Current Total Power |
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ON Semiconductor |
4 AMPERES 700 VOLTS 75 WATTS POWER TRANSISTOR http://onsemi.com 4 AMPERES 700 VOLTS 75 WATTS POWER TRANSISTOR • • • • Free Wheeling Diode Built In Flat DC Current Gain Fast Switching Times and Tight Distribution “Six Sigma” Process Providing Tight and Reproducible Parameter Spreads MAXIMUM |
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Motorola Inc |
Semiconductor Products Sector Engineering Bulletin 3 Input Power Changes One method to increase the operating frequency of an integrated circuit is to “shrink” the die (that is, reduce the die dimensions, both linearly and vertically). Reducing the die size can yield additional benefits, such as a |
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Inchange Semiconductor |
Silicon NPN Power Transistor emi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL49D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10m |
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Inchange Semiconductor |
Silicon NPN Power Transistor staining Voltage IC= 10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A VCE(sat)-2 Collector-Emitter Satura |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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ON Semiconductor |
NPN Transistor • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain hFE Fast Switching No Coil Required in Base Circuit for Turn−Off (No Current Tail) • Full Characterization at 125°C • Tight Parametric Distributions are Consisten |
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ON Semiconductor |
NPN Transistor ated Voltage(2) (for 1 sec, R.H. < 30%, TC = 25°C) Total Device Dissipation Derate above 25°C Operating and Storage Temperature Test No. 1 Per Fig. 22a Test No. 2 Per Fig. 22b Test No. 3 Per Fig. 22c (TC = 25°C) Symbol VCEO VCES VEBO IC ICM IB IBM VI |
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ON Semiconductor |
NPN Transistor |
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Fairchild Semiconductor |
Application Bulletin AB-12 voltage is necessarily larger than the output voltage, and so there is a net positive voltage across the inductor. Conversely, in State 2, ground is applied to the side of the inductor that was previously attached to the input voltage. For a buck co |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor onductor isc Silicon NPN Power Transistor isc Product Specification BUL39D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= |
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Inchange Semiconductor |
Silicon NPN Power Transistor HANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUL118D ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH |
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Hitachi Semiconductor |
2-7 RLL ENDEC BULLT-IN VFO |
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ON Semiconductor |
SWITCHMODE NPN Bipolar Power Transistor ♦ ♦ http://onsemi.com • Improved Efficiency Due to Low Base Drive Requirements: • • • • • High and Flat DC Current Gain Fast Switching ♦ No Coil Required in Base Circuit for Turn−Off (No Current Tail) Full Characterization at 125°C Two Packages C |
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ON Semiconductor |
POWER TRANSISTOR uous — Peak(1) RMS Isolated Voltage(2) (for 1 sec, R.H. < 30%, TC = 25°C) Total Device Dissipation Derate above 25°C Test No. 1 Per Fig. 22a Test No. 2 Per Fig. 22b Test No. 3 Per Fig. 22c (TC = 25°C) Symbol VCEO VCES VEBO IC ICM IB IBM VISOL BUL147 |
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ON Semiconductor |
NPN Transistor • Low Base Drive Requirement • High Peak DC Current Gain (55 Typical) @ IC = 100 mA • Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread • Integrated Collector –Emitter Free Wheeling Diode • Fully Char |
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Desde 2024. D4U Semiconductor.
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