ON Semiconductor BF2 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BF240	Fairchild Semiconductor	NPN RF Transistor = 0.1mA IC = 1mA, IB = 0.1mA IC = 7.0mA, VCE = 10V, f = 100MHz VCB = 10V, IE = 0, f = 1.0MHz 65 Min. 40 40 4.0 100 225 0.65 0.74 1100 0.34 V V MHz pF Max. Units V V V nA Collector-Emitter Breakdown Voltage * Collector-Base BreakdownVoltage Emitter-Ba
2	BF246B	Siemens Semiconductor Group	N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
3	BF246C	Siemens Semiconductor Group	N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
4	BF246	Siemens Semiconductor Group	N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
5	BF246A	Siemens Semiconductor Group	N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS
6	BF256C	Fairchild Semiconductor	N-Channel RF Amplifiers S = 15V, VGS = 0 3 6 11 4.5 7 13 18 mA VDS = 15V, VGS = 0, f = 1KHz mmhos ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 BF256A/BF256B/BF256C Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27
7	BF2000	Siemens Semiconductor Group	Silicon N Channel MOSFET Tetrode V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V DS = 0 Gate 2 source breakdown voltage ±I G2S = 10 mA, VG1S = 0 V, V DS = 0 V Gate 1 source leakage current ±VG1S = 5 V, V G2S = V DS = 0 Gate 2 source leakage current ±VG2S =
8	BF256A	ON Semiconductor	N-Channel MOSFET 5000 Units/Box 100 0 0 25 50 75 100 125 150 175 200 FREE AIR TEMPERATURE (°C) Figure 1. Power Derating Curve © Semiconductor Components Industries, LLC, 2001 1 September, 2001 – Rev. 3 Publication Order Number: BF256A/D BF256A ELECTRICAL CHAR
9	MMBF2201NT1	ON Semiconductor	Power MOSFET http://onsemi.com 300 mAMPS, 20 VOLTS RDS(on) = 1 W N−Channel 3 • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SC−70/SOT−323 Surface Mount Package Saves • Pb−Free Package is Available MAXIMUM RATINGS (TJ = 25°C unless
10	BF246B	Fairchild Semiconductor	N-Channel Switch ource Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Zero-Gate Voltage Drain Current * a Conditions IG = 1.0µA, VDS = 0 VGS = -15V, VDS = 0 VDS = 15V, ID = 10nA VDS = 15V, VGS = 0 Min. -25 Max Units V -5.0 -0.6 60 -14.5 140 n
11	BF256B	ON Semiconductor	N-Channel JFET RF Amplifier w This Device is Designed for VHF / UHF Amplifiers w Sourced from Process 50 w These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value
12	BF244A	Fairchild Semiconductor	N-Channel RF Amplifier Case Thermal Resistance, Junction to Ambient Max BF244A / BF244B / BF244C 350 2.8 125 357 Units mW mW/°C °C/W °C/W 1997 Fairchild Semiconductor Corporation BF244A / BF244B / BF244C N-Channel RF Amplifier (continued) Electrical Characteristics
13	BF245	Fairchild Semiconductor	N-Channel Amplifiers Common Source Forward gfs Transconductance VGS = 15V, VGS = 0 2 6 12 3 6.5 15 25 6.5 mA VGS = 15V, VGS = 0, f = 1KHz mmhos ©2003 Fairchild Semiconductor Corporation Rev. A1, June 2003 BF245A/BF245B/BF245C Package Dimensions TO-92 4.58 –0.1
14	BF245B	Fairchild Semiconductor	N-Channel Amplifiers Common Source Forward gfs Transconductance VGS = 15V, VGS = 0 2 6 12 3 6.5 15 25 6.5 mA VGS = 15V, VGS = 0, f = 1KHz mmhos ©2003 Fairchild Semiconductor Corporation Rev. A1, June 2003 BF245A/BF245B/BF245C Package Dimensions TO-92 4.58 –0.1
15	BF256A	Fairchild Semiconductor	N-Channel RF Amplifiers S = 15V, VGS = 0 3 6 11 4.5 7 13 18 mA VDS = 15V, VGS = 0, f = 1KHz mmhos ©2003 Fairchild Semiconductor Corporation Rev. A, June 2003 BF256A/BF256B/BF256C Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27
16	BF256B	Fairchild Semiconductor	N-Channel RF Amplifiers • This device is designed for VHF / UHF amplifiers • Sourced from process 50 1 TO-92 1. Gate 2. Source 3. Drain Ordering Information Part Number BF256B Top Mark BF256B Package TO-92 3L Packing Method Bulk Absolute Maximum Ratings Stresses exce
17	BF2xx	National Semiconductor	Transistors
18	MMBF2201N	ON Semiconductor	Power MOSFET • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SC−70/SOT−323 Surface Mount Package Saves Board Space • NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qua
19	BF245	ON Semiconductor	JFET VHF/UHF Amplifiers 2.0 BF245A, BF244A(2) 2.0 BF245B, BF244B 6.0 BF245C 12 1. On orders against the BF245, any or all subgroups might be shipped. 2. On orders against the BF244A, any or all subgroups might be shipped. 1 23 BF244A, BF244B CASE 29 –11, STYLE 22 TO
20	BF2000W	Siemens Semiconductor Group	Silicon N Channel MOSFET Tetrode 1S = 4 V, - V G2S = 4 V Gate 1 source breakdown voltage ±I G1S = 10 mA, VG2S = V DS = 0 Gate 2 source breakdown voltage ±I G2S = 10 mA, VG1S = 0 V, V DS = 0 V Gate 1 source leakage current ±VG1S = 5 V, V G2S = V DS = 0 Gate 2 source leakage current ±