| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ON Semiconductor |
Dual General Purpose Transistors • S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating |
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ON Semiconductor |
Dual General Purpose Transistors |
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ON Semiconductor |
Dual General Purpose Transistors • S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating |
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Fairchild Semiconductor |
Hammer Drivers/ Audio Amplifiers 23B : BDW23C ICEO Collector Cut-off Current : BDW23 : BDW23A : BDW23B : BDW23C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = 22V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 1A VCE = 3V, IC |
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Fairchild Semiconductor |
Hammer Drivers/ Audio Amplifiers 23B : BDW23C ICEO Collector Cut-off Current : BDW23 : BDW23A : BDW23B : BDW23C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = 22V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 1A VCE = 3V, IC |
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Fairchild Semiconductor |
Hammer Drivers/ Audio Amplifiers 23B : BDW23C ICEO Collector Cut-off Current : BDW23 : BDW23A : BDW23B : BDW23C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = 22V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 1A VCE = 3V, IC |
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Fairchild Semiconductor |
Hammer Drivers/ Audio Amplifiers : BDW24 : BDW24A : BDW24B : BDW24C ICEO Collector Cut-off Current : BDW24 : BDW24A : BDW24B : BDW24C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = - 22V, IB = 0 VCE = - 30V, IB = 0 VCE = - 40V, IB = 0 VCE = - 50V, IB = 0 VEB = - 5V, IC = |
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ON Semiconductor |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS http://onsemi.com • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: • • • • VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42/BDW47 Low Collector Emitter Saturation Voltage VCE(sat) = 2. |
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ON Semiconductor |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS http://onsemi.com • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: • • • • VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42/BDW47 Low Collector Emitter Saturation Voltage VCE(sat) = 2. |
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ON Semiconductor |
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS http://onsemi.com • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: • • • • VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42/BDW47 Low Collector Emitter Saturation Voltage VCE(sat) = 2. |
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ON Semiconductor |
Darlington Complementary Silicon Power Transistors • High DC Current Gain − hFE = 2500 (typ) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc: VCEO(sus) = 80 Vdc (min) − BDW46 100 Vdc (min) − BDW42/BDW47 • Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Ad |
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Comset Semiconductors |
NPN SILICON POWER DARLINGTONS Air Thermal Resistance 23/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BDW83, BDW83A, BDW83B, BDW83C, BDW83D, ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) B |
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AiT Semiconductor |
GENERAL PURPOSE TRANSISTOR t Collector-Emitter Voltage VCEO 65 45 30 V Collector-Base Voltage VCBO 80 50 30 V Emitter-Base Voltage VEBO 6.0 6.0 5.0 V Collector Current-Continuous IC 100 100 100 mAdc Stresses above may cause permanent damage to the devi |
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ON Semiconductor |
Dual General Purpose Transistors • S and NSV Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating |
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Fairchild Semiconductor |
Hammer Drivers/ Audio Amplifiers 23B : BDW23C ICEO Collector Cut-off Current : BDW23 : BDW23A : BDW23B : BDW23C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = 22V, IB = 0 VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 VEB = 5V, IC = 0 VCE = 3V, IC = 1A VCE = 3V, IC |
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Fairchild Semiconductor |
Hammer Drivers/ Audio Amplifiers : BDW24 : BDW24A : BDW24B : BDW24C ICEO Collector Cut-off Current : BDW24 : BDW24A : BDW24B : BDW24C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = - 22V, IB = 0 VCE = - 30V, IB = 0 VCE = - 40V, IB = 0 VCE = - 50V, IB = 0 VEB = - 5V, IC = |
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Fairchild Semiconductor |
Hammer Drivers/ Audio Amplifiers : BDW24 : BDW24A : BDW24B : BDW24C ICEO Collector Cut-off Current : BDW24 : BDW24A : BDW24B : BDW24C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = - 22V, IB = 0 VCE = - 30V, IB = 0 VCE = - 40V, IB = 0 VCE = - 50V, IB = 0 VEB = - 5V, IC = |
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Fairchild Semiconductor |
Hammer Drivers/ Audio Amplifiers : BDW24 : BDW24A : BDW24B : BDW24C ICEO Collector Cut-off Current : BDW24 : BDW24A : BDW24B : BDW24C IEBO hFE Emitter Cut-off Current * DC Current Gain VCE = - 22V, IB = 0 VCE = - 30V, IB = 0 VCE = - 40V, IB = 0 VCE = - 50V, IB = 0 VEB = - 5V, IC = |
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Siemens Semiconductor Group |
NPN Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A VCE( |
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Desde 2024. D4U Semiconductor.
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