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BDW36 |
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| Part Number | BDW36 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 180V(Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A ·Minimum Lot-to-Lot variations for robust device p... |
| Features |
NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A; IB= 1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 30A; IB= 6A
VBE(sat)-1 Base-Emitter Saturation Voltage
IC= 10A; IB= 1A
VBE(on) Base-Emitter On Voltage
IC= 10A; VCE= 4V
ICEO
Collector Cutoff Current
VCE= 90V; IB= 0
ICBO
Collector Cutoff Current
VCB=180V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 8A; V... |
| Document |
 BDW36 Data Sheet
PDF 208.72KB |
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Desde 2024. D4U Semiconductor.
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