| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Hitachi Semiconductor |
Octal Bus Transceivers With 3 State Outputs low power dissipation that is about 1/5 of high speed bipolar logic IC. When the frequency is 10 MHz. The device has eight bus transceivers with three state outputs in a 20 pin package. Each device has an active low enable input ( G ) and a direction |
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Siemens Semiconductor Group |
NPN Silicon AF Transistors 50 W ˚C mA A BC 639 80 100 V Total power dissipation, TC = 90 ˚C1) Ptot 156 75 K/W 1) 2) If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm × 10 mm large copper area for the collector terminal, Rth JA = 125 K/W an |
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Fairchild Semiconductor |
NPN EPITAXIAL SILICON TRANSISTOR dwidth Product VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=5V, IC=10mA, f=50MHz ©2002 Fairchild Semiconductor Corporation 1 TO-92 1. Emitter 2. Collector 3. Base Value 45 60 1 |
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ON Semiconductor |
High Current Transistors ck 2000/Ammo Pack 5000 Units/Box 2000/Ammo Pack 5000 Units/Box 2000/Ammo Pack 5000 Units/Box © Semiconductor Components Industries, LLC, 2001 1 June, 2000 – Rev. 1 Publication Order Number: BC636/D BC636, BC636 –16, BC638, BC640, BC640 –16 ELECTRI |
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Hitachi Semiconductor |
Octal Bus Transceivers With 3 State Outputs low power dissipation that is about 1/5 of high speed bipolar logic IC. When the frequency is 10 MHz. The device has eight bus transceivers with three state outputs in a 20 pin package. Each device has an active low enable input ( G ) and a direction |
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Siemens Semiconductor Group |
PNP Silicon AF Transistors + 150 W ˚C mA A BC 640 80 100 V Total power dissipation, TC = 90 ˚C1) Ptot 156 55 K/W 1) 2) If the transistors with max. 4 mm lead length are fixed on PCBs with a min. 10 mm x 10 mm large copper area for the collector terminal, Rth JA = 125 K/W |
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ON Semiconductor |
High Current Transistors |
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Holtek Semiconductor |
315/433MHz RF Super-Regenerative Receiver SoC A/D Flash MCU ............................................................................................................ 6 CPU Features.......................................................................................................................... 6 Pe |
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ON Semiconductor |
High Current Transistors • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector - Emitter Voltage Symbol BC637 BC639 VCEO Value 60 80 Unit Vdc Collector - Base Voltage BC637 BC639 VCBO 60 80 Vdc Emitter - Base Voltage Collector Current − Continuous Tota |
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ON Semiconductor |
PNP Epitaxial Silicon Transistor • Switching and Amplifier Applications • Complement to BC635 • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted) Parameter Symbol Value Unit Collect |
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Siemens Semiconductor Group |
NPN Silicon AF Transistors |
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Fairchild Semiconductor |
NPN EPITAXIAL SILICON TRANSISTOR dwidth Product VCB=30V, IE=0 VEB=5V, IC=0 VCE=2V, IC=5mA VCE=2V, IC=150mA VCE=2V, IC=500mA IC=500mA, IB=50mA VCE=2V, IC=500mA VCE=5V, IC=10mA, f=50MHz ©2002 Fairchild Semiconductor Corporation 1 TO-92 1. Emitter 2. Collector 3. Base Value 45 60 1 |
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ON Semiconductor |
High Current Transistors • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc BC635 45 BC637 60 BC639 80 Collector - Base Voltage VCBO Vdc BC635 45 BC637 60 BC639 80 Emitter - Base Voltage Col |
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ON Semiconductor |
High Current Transistors • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector - Emitter Voltage Symbol BC637 BC639 VCEO Value 60 80 Unit Vdc Collector - Base Voltage BC637 BC639 VCBO 60 80 Vdc Emitter - Base Voltage Collector Current − Continuous Tota |
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Fairchild Semiconductor |
PNP EPITAXIAL SILICON TRANSISTOR • Switching and Amplifier Applications • Complement to BC639 Ordering Information Part Number BC640TA Top Mark BC640 123 Straight Lead Bulk Packing TO-92 1. Emitter 12 3 2. Collector 3. Base Bent Lead Tape & Reel Ammo Packing Package TO-92 3 |
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Holtek Semiconductor |
I/O RF Transparent Transmission Flash MCU ............................................................................................................ 6 CPU Features.......................................................................................................................... 6 Pe |
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Holtek Semiconductor |
2.4GHz Flash RF TX/RX MCU ............................................................................................................ 7 CPU Features.......................................................................................................................... 7 Pe |
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ON Semiconductor |
Darlington Transistors • These are Pb−Free Devices* MAXIMUM RATINGS Rating Collector −Emitter Voltage Collector −Base Voltage Emitter−Base Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total Power Dissipation @ TA = 25°C |
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Siemens Semiconductor Group |
NPN Silicon Darlington Transistors -emitter breakdown voltage IC = 10 mA BC 617 BC 618 Collector-base breakdown voltage IC = 100 µA BC 617 BC 618 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 40 V VCB = 60 V VCB = 40 V, TA = 150 ˚C VCB = 60 V, TA = 150 ˚C Em |
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Fairchild Semiconductor |
PNP EPITAXIAL SILICON TRANSISTOR • Switching and Amplifier Applications • Complement to BC635 Ordering Information Part Number BC636TA Top Mark BC636 123 Straight Lead Bulk Packing TO-92 1. Emitter 12 3 2. Collector 3. Base Bent Lead Tape & Reel Ammo Packing Package TO-92 3 |
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Desde 2024. D4U Semiconductor.
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