| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Toshiba Semiconductor |
RECTIFIER W STANDARD SOLDERING PAD 1 2001-07-18 U1BC44,U1GC44,U1JC44 2 2001-07-18 U1BC44,U1GC44,U1JC44 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semico |
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Holtek Semiconductor |
315/433MHz Remote RF TX 8-Bit OTP MCU ................................................................................................................ 5 CPU Features........................................................................................................................... |
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ON Semiconductor |
32kb I2C CMOS Serial EEPROM |
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ON Semiconductor |
High Voltage Transistors -92 TO-92 Shipping 5000 Units/Box 5000 Units/Box 5000 Units/Box © Semiconductor Components Industries, LLC, 2003 1 March, 2003 - Rev. 2 Publication Order Number: BC447/D BC447, BC449, BC449A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise |
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ON Semiconductor |
High Current Transistors • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total P |
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ON Semiconductor |
High Current Transistors • These are Pb−Free Devices* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Collector −Emitter Voltage Collector Current − Continuous Total Power Dissipation @ TA = 25°C Derate above TA = 25°C Total P |
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ON Semiconductor |
High Current Transistors • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO V |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM |
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ON Semiconductor |
High Voltage Transistors 5000 Units/Box BC449 TO-92 5000 Units/Box BC449A TO-92 5000 Units/Box © Semiconductor Components Industries, LLC, 2003 March, 2003 - Rev. 2 1 Publication Order Number: BC447/D BC447, BC449, BC449A ELECTRICAL CHARACTERISTICS (TA = 25°C un |
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ON Semiconductor |
High Current Transistors • This is a Pb−Free Device* MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Symbol VCEO VCBO VEBO IC PD Value |
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Panasonic Semiconductor |
Ceramic Capacitors ● Resin molded SMD type for reflow soldering ● High reliability ● Safety requirement approved by UL, SEMKO, NEMKO, FIMKO, DEMKO and KTL (for Type FC) ■ Recommended Application ● Interference suppressors circuit and Isolation circuit of IT equipment s |
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Panasonic Semiconductor |
Ceramic Capacitors ■ Recommended Application ● Interference suppressors circuit and Isolation circuit of IT equipment such as MODEM. ● Interference suppressors circuit of small power supply machinery such as DC-DC converters and power modules. ■ Explanation of Part |
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ON Semiconductor |
High Current Transistors • Pb−Free Package is Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter-Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C To |
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ON Semiconductor |
EEPROM • Supports Standard, Fast and Fast−Plus I2C Protocol • 1.7 V to 5.5 V Supply Voltage Range • 32−Byte Page Write Buffer • Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs (SCL and SDA) • Low Power CMOS Technology • 1,000,000 Program/Er |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAM |
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ON Semiconductor |
High Voltage Transistors -92 TO-92 Shipping 5000 Units/Box 5000 Units/Box 5000 Units/Box © Semiconductor Components Industries, LLC, 2003 1 March, 2003 - Rev. 2 Publication Order Number: BC447/D BC447, BC449, BC449A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise |
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NXP Semiconductors |
DUODIODE TRIODE |
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Panasonic Semiconductor |
Ceramic Capacitors ■ Recommended Application ● Interference suppressors circuit and Isolation circuit of IT equipment such as MODEM. ● Interference suppressors circuit of small power supply machinery such as DC-DC converters and power modules. ■ Explanation of Part |
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ON Semiconductor |
High Current Transistors • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO V |
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Fairchild Semiconductor |
N-Channel Power MOSFET • 6.2A, 600V • rDS(ON) = 1.200Ω • Single Pulse Avalanche Energy Rated • Simple Drive Requirements • Ease of Paralleling • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PAR |
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Desde 2024. D4U Semiconductor.
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