| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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National Semiconductor |
3.5Amp complementary power transistors .... • .45 Volt/3.5 Amp rating [!] packages and lead cod ina It) • Available in TO-.126 and TO-220 packages • Guaranteed Vce (sad and VBe (sat) at Ic = 3A, 10 = |
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ON Semiconductor |
400 Watt Peak Power Zener Transient Voltage Suppressors Working Peak Reverse Voltage Range − 10 V to 78 V Standard Zener Breakdown Voltage Range − 11.7 V to 91.3 V Peak Power − 400 Watts @ 1 ms ESD Rating of Class 3 (> 16 kV) per Human Body Model Response Time is Typically < 1 ns Flat Handling |
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Panasonic Semiconductor |
Silicon PNP epitaxial planar type Low collector-emitter saturation voltage Vce(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 Unit: mm 2.0 0.3 3 0.13 1.25 2.1 0.9 (0.65) (0.65) 1.3 Marking Symbol: L1 Packaging Embossed type (Thermo-co |
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Central Semiconductor |
SURFACE MOUNT SILICON UNI-DIRECTIONAL GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSORS |
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Torex Semiconductor |
ICS FOR USE WITH CRYSTAL OSCILLATORS 0/1, f0/2, f0/4, f0/8 Output : 3-State, 10 - TTL fanout Operating Voltage Range : 4.0V ~ 6.0V Small Quiescent Current Stand-By Function Low Cost : Oscillator circuit can be created from just an external crystal Ultra Small Package : SOT-26 (150mW) mi |
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Zarlink Semiconductor |
RADIATION HARD 4096 x 1 BIT STATIC RAM s 3µm CMOS-SOS Technology s Latch-up Free s Fast Access Time 90ns Typical s Total Dose 106 Rad(Si) s Transient Upset >1010 Rad(Si)/sec s SEU <10-10 Errors/bitday s Single 5V Supply s Three State Output s Low Standby Current 10µA Typical s -55°C to +1 |
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Powerex Power Semiconductors |
Hybrid IC IGBT Gate Driver £ Propagation Delay time: 0.2 µs (Typical) £ Output is ±5A maximum £ Two Supply Drive (VCC: 15 Volts, VEE: -10 Volts) £ SIP Outline Allows More Space on Mounting Area £ Electrical Isolation Voltage Between Input and Output (2500 Vrms for 1 Minute) £ |
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Toshiba Semiconductor |
2SA510 • High Breakdown Voltage : VcEO=-100V : VcEO=-60V • Various Uses for Medium Power (2S^,510) (2S/i512) zz pa45 I 1 M os Oi : I C=-1.5A (Max.), P c=800mW (Max.) • Complementary to 2SC510 and 2SC512. MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC SYM |
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ON Semiconductor |
HART Modem • Single−chip, Half−duplex 1200 Bits per Second FSK Modem • Bell 202 Shift Frequencies of 1200 Hz and 2200 Hz • 3.0 V − 5.5 V Power Supply • Transmit−signal Wave Shaping • Receive Band−pass Filter • Low Power: Optimal for Intrinsically Safe Applicati |
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Taiwan Semiconductor |
Transient Voltage Suppressor Diodes Transient Voltage Suppressor Diodes Voltage Range 5.0 to 170 Volts 500 Watts Peak Power 1.0 Watt Steady State DO-15 Plastic package has Underwriters Laboratory Flammability Classification 94V-0 500W surge capability at 10 X 10us waveform, duty cycl |
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United Monolithic Semiconductors |
X-band Medium Power Amplifier 0.25µm Power pHEMT Technology Frequency band: 8-12GHz Output power: 29dBm @ 3dBcomp Linear gain: 25dB High PAE: 39% @ 3dBcomp Noise Factor: 5dB typ. Quiescent bias point: Vd=8V, Id=0.19A Chip size: 2.37x1.82x0.07mm Pout (dBm) & PAE(% |
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Digitron Semiconductors |
TRANSIENT VOLTAGE SUPPRESSORS • Available as “HR” (high reliability) screened per MIL‐PRF‐19500, JANTX level. Add “HR” suffix to base part number. • Available Non‐RoHS (standard) or RoHS compliant (add PBF suffix). • For bi‐directional construction, indicate a “C” or “CA” suff |
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Taiwan Semiconductor |
Surface Mount Transient Voltage Suppressor ● Low profile package ● Ideal for automated placement ● Glass passivated junction ● Excellent clamping capability ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Compliant to RoHS directive 2011/65/EU and in acc |
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Central Semiconductor |
SILICON ZENER DIODE |
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General Semiconductor |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR 0.034 (0.86) 1.0 (25.4) MIN. 0.028 (0.71) DIA. 0.300 (7.6) 0.230 (5.8) 0.140 (3.6) 0.104 (2.6) DIA. 1.0 (25.4) MIN. ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ Glass passivated junction ♦ 500W peak pulse powe |
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E-DA SEMICONDUCTOR |
TRANSIENT VOLTAGE SUPPRESSOR Green • For surface mounted applications in order to optimize board space • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • High temperature soldering : 260°C /10 second |
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E-DA SEMICONDUCTOR |
TRANSIENT VOLTAGE SUPPRESSOR Green • For surface mounted applications in order to optimize board space • Glass passivated junction • Low inductance • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • High temperature soldering : 260°C /10 second |
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Toshiba Semiconductor |
Silicon PNP Transistor • High Breakdown Voltage : VcEO=-100V : VcEO=-60V • Various Uses for Medium Power (2S^,510) (2S/i512) zz pa45 I 1 M os Oi : I C=-1.5A (Max.), P c=800mW (Max.) • Complementary to 2SC510 and 2SC512. MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC SYM |
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Freescale Semiconductor |
Microcontroller Unit (MCU) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 Modes of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .21 B |
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Panasonic Semiconductor |
Silicon PNP epitaxial planar type Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Unit: mm Marking Symbol: L5 Packaging DRA5143E0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (st |
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Desde 2024. D4U Semiconductor.
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