| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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InPower Semiconductor |
N-Channel MOSFET 0pF,R=1.5K: 6000 V TL TPKG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds Package Body for 10 seconds 300 260 TJ and TSTG Operating Junction and Storage Temperature Range -55 to 150 *Drain Current limited |
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Powerex Power Semiconductors |
Phase Control SCR (650 Amperes Average 1600 Volts) |
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Fairchild Semiconductor |
N-Channel MOSFET • r DS(ON) = 4.3mΩ (Typ.), V GS = 10V, ID = 80A • Qg(tot) = 61nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Formerly developmental type 82575 Applications • |
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Fairchild Semiconductor |
Motion SPM5 • UL Certified No. E209204 (UL1557) • 500 V RDS(on) = 1.4 Max FRFET MOSFET 3-Phase Inverter with Gate Drivers and Protection • Built-In Bootstrap Diodes Simplify PCB Layout • Separate Open-Source Pins from Low-Side MOSFETs for Three-Phase Current- |
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NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET ● VDS =60V,ID =50A RDS(ON) <20mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special proces |
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Fairchild Semiconductor |
Motion SPM5 • UL Certified No. E209204 (UL1557) • 500 V RDS(on) = 2.4 Max FRFET MOSFET 3-Phase Inverter with Gate Drivers and Protection • Built-In Bootstrap Diodes Simplify PCB Layout • Separate Open-Source Pins from Low-Side MOSFETs for Three-Phase Current- |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current –ID= 32A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLU |
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Silan Semiconductors |
(SC9149A / SC9150A) 6.0V infrared remote control receiver |
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Panasonic Semiconductor |
2SB950A q q q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –5 –8 –4 40 2 150 –55 to +150 Unit V 16.7±0.3 φ3.1±0.1 4.0 14.0±0.5 s A |
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AiT Semiconductor |
50A N-CHANNEL MOSFET The AM50N04 is available in TO-252 package. BVDSS RDSON ID 40V 11mΩ 50A Green Device Available Super Low Gate Charge Excellent CdV/dt Effect Decline Advanced High Cell Density Trench Technology APPLICATION High frequency switching |
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Central Semiconductor |
SILICON ZENER DIODES |
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Fairchild Semiconductor |
Hermetic TO-18 Silicon Phototransistors Tc = 25°C Derate Linearly from 25°C Total Dissipation at TA = 25°C Derate Linearly from 25°C 600mW 4.8 mW/oC 300mW 2.4 mW/oC Maximum Voltages and Currents VCB Collector-to-Base Voltage FPT510/FPT510A 60 V FPT530/FPT530A 50 V FPT550 I FPT550A 30 |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE |
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Powerex Power Semiconductors |
Low side Chopper IGBT Module 1200V 450A IGBT / 1200V 750A Fast Diode Low Drive Requirement Low VCE(sat) Super Fast Diode (3) F Series 150A 1200V Trench Gate Chips per IGBT (5) F Series 150A 1200V Chips per Diode Isolated Baseplate for Easy Heat Sinking Al2O3 DBC Ceramic Low Thermal Impedance Outline Drawing and Circ |
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Toshiba Semiconductor |
MICROWAVE POWER GAAS FET |
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Freescale Semiconductor |
Integrated Silicon Pressure Sensor / Manifold Absolute Pressure Sensor |
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ON Semiconductor |
Self-Protected High-Side Driver • Short Circuit Protection • Thermal Shutdown with Automatic Restart • Overvoltage Protection • Integrated Clamp for Inductive Switching • Loss of Ground Protection • ESD Protection • Slew Rate Control for Low EMI • Very Low Standby Current • NCV Pre |
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Taiwan Semiconductor |
(1.5KE Series) Transient Voltage Suppressor Diodes UL Recognized File # E-96005 Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Exceeds environmental standards of MIL-STD-19500 1500W surge capability at 10 x 100 us waveform, duty cycle: 0.01% Excellent clamping capabilit |
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ON Semiconductor |
Constant Current Regulator & LED Driver http://onsemi.com Ireg(SS) = 350 mA @ Vak = 7.5 V Anode 1 Cathode 4 • • • • • • • • • Robust Power Package: 11 W Wide Operating Voltage Range Immediate Turn-On Voltage Surge Suppressing − Protecting LEDs UL94−V0 Certified SBT (Self−Biased Transis |
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Taiwan Semiconductor |
150mA Ultra Low Dropout Voltage Regulator very low quiescent current (75uA Typ.) and very low drop output voltage (Typ. 40uV at light load and 380 mV at 100 mA). This includes a tight initial tolerance of 1% (A version), extremely good load and line regulation 0.05% typ. and very low output |
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Desde 2024. D4U Semiconductor.
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