logo

IRFP450A Inchange Semiconductor N-Channel MOSFET Transistor Datasheet

IRFP450A MOSFET N-CH 500V 14A TO247-3


Inchange Semiconductor
IRFP450A
IRFP450A
Part Number IRFP450A
Manufacturer Inchange Semiconductor
Description ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Op...
Features
·Drain Current
  –ID= 14A@ TC=25℃
·Drain Source Voltage- : VDSS= 500V(Min)
·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max)
·Fast Switching DESCRIPTION
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±20 V 14 A 56 A 190 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERI...

Document Datasheet IRFP450A datasheet pdf (62.14KB)
Distributor Distributor
DigiKey
Stock 0 In Stock
Price
No price available
BuyNow BuyNow BuyNow (Manufacturer a Vishay Siliconix)




IRFP450A Distributor

part
Vishay Intertechnologies
IRFP450APBF
MOSFET,N CH,W DIODE,500V,14A,TO-247AC
1000 units: 2901 KRW
500 units: 2960 KRW
100 units: 3097 KRW
10 units: 3689 KRW
1 units: 4679 KRW
Distributor
element14 Asia-Pacific

1973 In Stock
BuyNow BuyNow
part
Vishay Siliconix
IRFP450A
MOSFET N-CH 500V 14A TO247-3
No price available
Distributor
DigiKey

0 In Stock
BuyNow BuyNow
part
Vishay Intertechnologies
IRFP450APBF
MOSFET 500V N-CH HEXFET
1 units: 3.42 USD
10 units: 3.12 USD
25 units: 2.66 USD
100 units: 2.32 USD
250 units: 2.26 USD
500 units: 2.15 USD
2500 units: 2.04 USD
Distributor
Mouser Electronics

2079 In Stock
BuyNow BuyNow
part
Vishay Intertechnologies
IRFP450APBF
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-247AC
2500 units: 1.4888 USD
500 units: 1.5042 USD
250 units: 1.9058 USD
100 units: 1.936 USD
25 units: 2.132 USD
10 units: 2.485 USD
1 units: 2.6665 USD
Distributor
Arrow Electronics

843 In Stock
BuyNow BuyNow
part
Vishay Intertechnologies
IRFP450APBF
MOSFET, Power, N-Ch, VDSS 500V, RDS(ON) 0.4Ohm, ID 14A, TO-247AC, PD 190W, VGS +/-30V | Vishay PCS IRFP450APBF
1 units: 3.43 USD
5 units: 3.16 USD
10 units: 3.02 USD
20 units: 2.75 USD
100 units: 2.58 USD
Distributor
RS

474 In Stock
BuyNow BuyNow
part
Vishay Intertechnologies
IRFP450APBF
Trans MOSFET N-CH 500V 14A 3-Pin(3+Tab) TO-247AC
4 units: 2.439 USD
Distributor
Verical

120 In Stock
BuyNow BuyNow
part
Vishay Intertechnologies
IRFP450APBF
MOSFETs 500V N-CH HEXFET
25 units: 1.96 USD
50 units: 1.92 USD
100 units: 1.88 USD
250 units: 1.85 USD
500 units: 1.81 USD
1000 units: 1.77 USD
2000 units: 1.74 USD
Distributor
TTI

1575 In Stock
BuyNow BuyNow
part
International Rectifier
IRFP450A
MOSFET Transistor, N-Channel, TO-247VAR
109 units: 1.599 USD
11 units: 1.845 USD
1 units: 3.69 USD
Distributor
Quest Components

209 In Stock
BuyNow BuyNow
part
Vishay Intertechnologies
IRFP450APBF
Transistor: N-MOSFET; unipolar; 500V; 8.7A; 190W; TO247AC
250 units: 1.81 USD
100 units: 2.06 USD
25 units: 2.43 USD
1 units: 2.97 USD
Distributor
TME

817 In Stock
BuyNow BuyNow
part
Vishay Intertechnologies
IRFP450APBF
No price available
Distributor
PUI

1000 In Stock
No Longer Stocked





IRFP450A Similar Datasheet

Part Number Description
IRFP450
manufacturer
Inchange Semiconductor
N-Channel MOSFET Transistor
·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±20 V 14 A 56 A 180 W -55~150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX 0.7 30 UNIT ℃/W ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transisto...
IRFP450
manufacturer
International Rectifier
Power MOSFET
...
IRFP450
manufacturer
Intersil Corporation
N-Channel Power MOSFET
IRFP450 Data Sheet July 1999 File Number 2331.3 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17435. Features • 14A, 500V • rDS(ON) = 0.400Ω •...
IRFP450
manufacturer
ST Microelectronics
N-Channel Power MOSFET
This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain- gate Voltage (RGS = 20 kΩ) VGS Gat e-source Voltage ID Drain Current (continuous) at Tc = 25 oC ID Drain Current (continuous) at Tc = 100 oC IDM ( •) Ptot Drain Current (pulsed) Tot al Dissipation at Tc = 25 o...
IRFP450
manufacturer
Vishay
Power MOSFET
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. ORDERING INFORMATION Package Lead (Pb)-free TO-247 IRFP450PbF ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Sourc...
IRFP450
manufacturer
IXYS
Standard Power MOSFET
Standard Power MOSFET N-Channel Enhancement Mode IRFP 450 VDSS = 500 V ID(cont) = 14 A RDS(on) = 0.40 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM I AR EAR dv/dt PD T J TJM T stg Md Weight TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Mounting torque Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 500 V 500 V ±20 V ±30 V 14 A 56 A 14 A 19 mJ 3.5 V/ns TO-247 AD G = Gate, S = Source, D (TAB) D = Drain, TAB = Drain 190 W -55 ... +150 150 -55 ... +150 °C °C °C 1...
IRFP450
manufacturer
Fairchild Semiconductor
N-Channel Power MOSFET
Data Sheet January 2002 IRFP450 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17435. Ordering Information PART NUMBER PACKAGE BRAND IRFP...
IRFP450A
manufacturer
International Rectifier
Power MOSFET
PD -91884 SMPS MOSFET IRFP450A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified ( See AN 1001) l VDSS 500V Rds(on) max 0.40Ω ID 14A TO-247AC G DS Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Sou...
IRFP450A
manufacturer
Vishay Siliconix
Power MOSFET
IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 64 16 26 Single D FEATURES 500 0.40 • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance Avalanche Voltage and Current • Effective Coss Specified • Lead (Pb)-free Available and Available RoHS* COMPLIANT TO-247 APPLICATIONS • Switch Mode Power Supply (SMPS) G • Uninterruptable Power Supply • High Speed Power Switching S D G S N-Channel MOSFET TYPICAL SMPS TOPOLOGIES • Two Transistor Forward • Half Bridge, Full Bridge • PFC Boost ORDERING INFORMATIO...




logo    Since 2024. D4U Semiconductor.   |   Contact Us   |   Privacy Policy