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| Part Number | IRFP450 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IRFP450 |
| Manufacturer | ST Microelectronics |
| Title | N-Channel Power MOSFET |
| Description | This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERT. |
| Features |
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
( •) Pulse width limited by safe operating area Value Uni t 500 V 500 V ± 20 V 14 A 8.7 A 56 A 190 W 1.5 W/oC 3.5 -65 to 150 150 (1) ISD ≤14 A, di/dt ≤ 130 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX V/ ns oC oC August 1998 1/8 IRFP450 THERMAL DATA Rt hj-ca se Rth j -a m b Rthc- si nk. |
| Part Number | IRFP450 |
| Manufacturer | IXYS |
| Title | Standard Power MOSFET |
| Description | Standard Power MOSFET N-Channel Enhancement Mode IRFP 450 VDSS = 500 V ID(cont) = 14 A RDS(on) = 0.40 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM I AR EAR dv/dt PD T J TJM T stg Md Weight TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C T. |
| Features | l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Symbol VDSS V GS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 250 µA V DS = V, GS I D = 250 µA VGS = ±20 VD. |
| Part Number | IRFP450 |
| Manufacturer | Fairchild Semiconductor |
| Title | N-Channel Power MOSFET |
| Description | Data Sheet January 2002 IRFP450 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.. |
| Features |
• 14A, 500V • rDS(ON) = 0.400Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE DRAIN (TAB) ©2002 Fairchild Semiconductor Corpo. |
| Part Number | IRFP450 |
| Manufacturer | Intersil Corporation |
| Title | N-Channel Power MOSFET |
| Description | IRFP450 Data Sheet July 1999 File Number 2331.3 14A, 500V, 0.400 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode. |
| Features |
• 14A, 500V • rDS(ON) = 0.400Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFP450 PACKAGE TO-247 BRAND IRFP450 Symbol D NOTE: When ordering, use the enti. |
| Part Number | IRFP450 |
| Manufacturer | Vishay |
| Title | Power MOSFET |
| Description | Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220. |
| Features |
• Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-r. |
| Part Number | IRFP450 |
| Manufacturer | International Rectifier |
| Title | Power MOSFET |
| Description | . |
| Features | . |
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