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IRFP450 |
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| Part Number | IRFP450 |
| Manufacturer | IXYS |
| Description | Standard Power MOSFET N-Channel Enhancement Mode IRFP 450 VDSS = 500 V ID(cont) = 14 A RDS(on) = 0.40 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM I AR EAR dv/dt PD T J TJM T stg Md Weig... |
| Features |
l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH)
- easy to drive and to protect l Fast switching times
Symbol
VDSS V
GS(th)
IGSS IDSS
R DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 0 V, ID = 250 µA
V DS
=
V, GS
I D
=
250
µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS V =0V GS TJ = 25°C T J = 125°C V = 10 V, I = 8.4 A GS D Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 500 2 V 4V ±100 nA 25 µA 250 µA 0.40 Ω Applications l Switch-mod... |
| Document |
 IRFP450 Data Sheet
PDF 45.10KB |
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Desde 2024. D4U Semiconductor.
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