ON Semiconductor 45H Hoja de datos

No.	parte #	Fabricante	Descripción
1	45H11	ON Semiconductor	MJD45H11 • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Electrically Similar to Popular D44H/D45H Series • Low Collector Emitter Saturation Voltage • Fast Switching Speeds
2	D45H1	Mospec Semiconductor	Power Transistors
3	D45H5	Boca Semiconductor Corporation	Complementary Silicon Power Transistors
4	KSE45H1	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor mitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCE = Rated, VCEO, VEB = 0 VEB = - 5V, IC = 0 VCE = - 1V, IC = - 2A 35 60 -1 -1 -1.5 40 230 135 500 100 V V V MHz pF ns ns
5	KSE45H10	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor mitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCE = Rated, VCEO, VEB = 0 VEB = - 5V, IC = 0 VCE = - 1V, IC = - 2A 35 60 -1 -1 -1.5 40 230 135 500 100 V V V MHz pF ns ns
6	KSE45H4	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor mitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCE = Rated, VCEO, VEB = 0 VEB = - 5V, IC = 0 VCE = - 1V, IC = - 2A 35 60 -1 -1 -1.5 40 230 135 500 100 V V V MHz pF ns ns
7	KSE45H5	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor mitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCE = Rated, VCEO, VEB = 0 VEB = - 5V, IC = 0 VCE = - 1V, IC = - 2A 35 60 -1 -1 -1.5 40 230 135 500 100 V V V MHz pF ns ns
8	KSE45H7	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor mitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCE = Rated, VCEO, VEB = 0 VEB = - 5V, IC = 0 VCE = - 1V, IC = - 2A 35 60 -1 -1 -1.5 40 230 135 500 100 V V V MHz pF ns ns
9	KSE45H8	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor mitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCE = Rated, VCEO, VEB = 0 VEB = - 5V, IC = 0 VCE = - 1V, IC = - 2A 35 60 -1 -1 -1.5 40 230 135 500 100 V V V MHz pF ns ns
10	RA45H4047M	Mitsubishi Electric Semiconductor	MITSUBISHI RF MOSFET MODULE 400-470MHz 45W 12.5V MOBILE RADIO • Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V) • Pout>45W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW • Broadband Frequency Range: 400-470MHz • Low-Power Control Current IGG=1mA (typ) at VGG=5V • Module Size: 66 x 21 x 9.88 mm • Linear o
11	MJB45H11	ON Semiconductor	PNP Transistor • Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ 8.0 A • Fast Switching Speeds • Complementary Pairs Simplifies Designs • Epoxy Meets UL 94 V−0 @ 0.125 in • ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V • NJ
12	PI74LVTC245H	Pericom Semiconductor Corporation	3.3V 8 BIT BIDIRECTIOANAL TRANCEIVER WITH 3 STATE OUTPUTS • Advanced low power CMOS design for 2.7V to 3.6V VCC operation • Supports 5V input/output tolerance in mixed signal mode operation • Function compatible with LVT family of products • Balanced ±24mA output drive • Typical VOLP (Output Ground Bounce)
13	MJB45H11	Inchange Semiconductor	Silicon PNP Power Transistor )CEO Collector-Emitter Breakdown Voltage IC=- 30mA; IB= 0 VCE(sat) VBE(sat) ICEO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current IC=-8A; IB=- 400mA IC=-8A; IB= -800mA VCE= -80V; IE= 0 IEBO Emitter Cu
14	CY8C22345H	Cypress Semiconductor	Automotive Programmable System-on-Chip ■ Automotive Electronics Council (AEC) Q100 qualified ■ Powerful Harvard-architecture processor ❐ M8C processor speeds up to 24 MHz ❐ 8 × 8 multiply, 32-bit accumulate ❐ Low power at high speed ❐ Automotive A-grade: 3.0 V to 5.25 V operation at –40 °
15	D45H10	ON Semiconductor	Complementary Silicon Power Transistors http://onsemi.com • Low Collector−Emitter Saturation Voltage • Fast Switching Speeds • Complementary Pairs Simplifies Designs • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Collector−Emitter Voltage D44H8, D45H8 D44H11, D45H11 Emitter Base
16	D45H7	Boca Semiconductor Corporation	Complementary Silicon Power Transistors
17	KSE45H11	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor 1V, IC = - 2A VCE(sat) Collector-Emitter Saturation Voltage : KSE45H 1, 4, 7 10 : KSE45H 2, 5, 8,11 VBE(sat) Base-Emitter Saturation Voltage fT Current Gain Bandwidth Product Cob Output Capacitance tON Turn ON Time tSTG Storage Time tF
18	KSE45H2	Fairchild Semiconductor	PNP Epitaxial Silicon Transistor mitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time Test Condition VCE = Rated, VCEO, VEB = 0 VEB = - 5V, IC = 0 VCE = - 1V, IC = - 2A 35 60 -1 -1 -1.5 40 230 135 500 100 V V V MHz pF ns ns
19	MJD45H11	Inchange Semiconductor	Silicon PNP Power Transistor tance,Junction to Ambient 71.4 ℃/W MJD45H11 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors MJD45H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIO
20	D45H11	ON Semiconductor	Complementary Silicon Power Transistors • Low Collector−Emitter Saturation Voltage • Fast Switching Speeds • Complementary Pairs Simplifies Designs • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage D44H8, D45H8 D44H1