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MJD45H11 |
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| Part Number | MJD45H11 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD44H11 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for rob... |
| Features |
tance,Junction to Ambient 71.4 ℃/W
MJD45H11
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isc Silicon PNP Power Transistors
MJD45H11
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0
-80
V
VCE(sat) Collector-EmitterSaturation Voltage
IC= -8A ;IB= -0.4 A
-1.0 V
VBE(sat) Base-Emitter Saturation Voltage
IC= -8A ;IB= -0.8 A
-1.5 V
ICES
Collector Cutoff Current
VCE=Rated VCEO; VBE= 0
-1.0 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= ... |
| Document |
 MJD45H11 Data Sheet
PDF 243.16KB |
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