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| Part Number | MJD45H11 |
| Distributor | Stock | Price | Buy |
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| Part Number | MJD45H11 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Low Collector-Emitter Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC = 8A ·Fast Switching Speeds ·Complement to Type MJD44H11 ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general pourpose power ampl. |
| Features | tance,Junction to Ambient 71.4 ℃/W MJD45H11 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors MJD45H11 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA; IB= 0 -80 V VCE(sat) Collector-EmitterSaturation Voltage IC= -8A ;. |
| Part Number | MJD45H11 |
| Manufacturer | Fairchild |
| Title | PNP Epitaxial Silicon Transistor |
| Description | MJD45H11 — PNP Epitaxial Silicon Transistor April 2015 MJD45H11 PNP Epitaxial Silicon Transistor Features • General-Purpose Power and Switching such as Output or Driver Stages in Applications • D-PAK for Surface-Mount Applications • Lead-Formed for Surface Mount Application (No Suffix) • Fast Swit. |
| Features |
• General-Purpose Power and Switching such as Output or Driver Stages in Applications • D-PAK for Surface-Mount Applications • Lead-Formed for Surface Mount Application (No Suffix) • Fast Switching Speeds • Low Collector Emitter Saturation Voltage 1 D-PAK 1.Base 2.Collector 3.Emitter Ordering Information Part Number MJD45H11TF MJD45H11TM Top Mark MJD45H11 MJD45H11 Package TO-252 3L (DPAK) TO-2. |
| Part Number | MJD45H11 |
| Manufacturer | ST Microelectronics |
| Title | Complementary power transistors |
| Description | These devices are manufactured using low voltage multi epitaxial planar technology. They are intended for general-purpose linear and switching applications. Datasheet − production data . TAB2 3 1 DPAK TO-252 Figure 1. Internal schematic diagram C (TAB) C (TAB) (1) B (1) B E (3) E (3) Table . |
| Features |
■ Low collector-emitter saturation voltage ■ Fast switching speed ■ Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") Applications ■ Power amplifier ■ Switching circuits Description These devices are manufactured using low voltage multi epitaxial planar technology. They are intended for general-purpose linear and switching applications. Datasheet − production data . TAB2. |
| Part Number | MJD45H11 |
| Manufacturer | ON Semiconductor |
| Title | Complementary Power Transistors |
| Description | MJD44H11 (NPN), MJD45H11 (PNP) Complementary Power Transistors DPAK for Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mou. |
| Features |
• Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • Straight Lead Version in Plastic Sleeves (“−1” Suffix) • Electrically Similar to Popular D44H/D45H Series • Low Collector Emitter Saturation Voltage • Fast Switching Speeds • Complementary Pairs Simplifies Designs • Epoxy Meets UL 94 V−0 @ 0.125 in • NJV Prefix for Automotive and Other Applications Requiring Unique Site a. |
| Part Number | MJD45H11 |
| Manufacturer | Motorola |
| Title | SILICON POWER TRANSISTORS |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44H11/D Complementary Power Transistors • • • • • • • MJD44H11 * PNP MJD45H11 * *Motorola Preferred Device NPN DPAK For Surface Mount Applications . . . for general purpose power and switching such as output or driver stages in ap. |
| Features | Transistor Device Data 0.118 3.0 0.07 1.8 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ. |
| Part Number | MJD45H11 |
| Manufacturer | nexperia |
| Title | 8A PNP high power bipolar transistor |
| Description | PNP high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package. NPN complement: MJD44H11 2. Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD45H series • Low . |
| Features |
and benefits
• High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD45H series • Low collector emitter saturation voltage • Fast switching speeds 3. Applications • Power management • Load switch • Linear mode voltage regulator • Constant current drive backlighting application • Motor drive • Relay replacement 4. Quick. |
similar datasheet
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