ON Semiconductor 1SS Hoja de datos

No.	parte #	Fabricante	Descripción
1	1SS348	Toshiba Semiconductor	Diode ings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failu
2	1SS86	Hitachi Semiconductor	Silicon Schottky Barrier Diode • Low capacitance. (C = 0.85 pF max) • High reliability with glass seal. Ordering Information Type No. 1SS86 Cathode band White 2nd band White Mark H Package Code DO-35 Pin Arrangement H 1 2nd band Cathode band 2 1. Cathode 2. Anode 1SS86 Abso
3	1SS110	Hitachi Semiconductor	Silicon Diode • Low forward resistance. (r f = 0.9 Ω max) • Suitable for 5mm pitch high speed automatical insertion. • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS110 Cathode band Verdure Package Code MHD
4	1SS270A	Hitachi Semiconductor	Silicon Diode • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS270A Cathode band Navy Blue Package Code MHD Outline 1 Cat
5	1SS391	Toshiba Semiconductor	Silicon Diode emperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individu
6	1SS198	Hitachi Semiconductor	Silicon Schottky Barrier Diode • Detection efficiency is very good. • Small temperature coefficient. • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS198 Cathode Green Mark 2 Package Code MHD Outline 2 1 Cathode band 2
7	1SS337	Toshiba Semiconductor	Silicon Epitaxial Planar Type Diode ture/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual rel
8	1SS82	Hitachi Semiconductor	Silicon Diode • High reverse voltage. (VR = 200V) • High reliability with glass seal. Ordering Information Type No. 1SS82 Cathode band Verdure 2nd band Light Blue Package Code DO-35 Outline 1 2nd band Cathode band 2 1. Cathode 2. Anode 1SS82 Absolute Maximum
9	1SS104	Toshiba Semiconductor	SILICON DIODE
10	1SS272	Toshiba Semiconductor	Silicon Epitaxial Planar Type Diode use this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the To
11	1SS377	Toshiba Semiconductor	Silicon Epitaxial Schottky Barrie Diode te maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and e
12	1SS400T1G	ON Semiconductor	High-Speed Switching Diode • High−Speed Switching Applications • Lead Finish: 100% Matte Sn (Tin) • Qualified Maximum Reflow Temperature: 260°C • Extremely Small SOD−523 Package • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Require
13	5LN01SS	ON Semiconductor	N-Channel Small Signal MOSFET • Low ON-resistance • Ultrahigh-speed switching • 1.5V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power D
14	1SS106	Hitachi Semiconductor	Silicon Schottky Barrier Diode • Detection efficiency is very good. • Small temperature coefficient. • High reliability with glass seal. Ordering Information Type No. 1SS106 Cathode White 2nd band White Mark H Package Code DO-35 Outline H 1 2nd band Cathode band 2 1. Cathode
15	1SS119	Hitachi Semiconductor	Silicon Diode • Low capacitance. (C = 3.0pF max) • Short reverse recovery time. (trr = 3.5ns max) • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS119 Cathode band Light Blue Package Code MHD Outline 1 Cat
16	1SS200	Toshiba Semiconductor	Diode the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test re
17	1SS250	Toshiba Semiconductor	Silicon Epitaxial Planar Type Diode this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshib
18	1SS293	Toshiba Semiconductor	Diode less, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety,
19	1SS302	Toshiba Semiconductor	Diode e within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability t
20	1SS322	Toshiba Semiconductor	Silicon Epitaxial Schottky Barrier Type Diode iate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Chara