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NIKO-SEM |
N-Channel MOSFET TEST CONDITIONS STATIC LIMITS UNIT MIN TYP MAX Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) VGS = 0V, ID = 250A VDS = VGS, I |
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NIKO-SEM |
N-/P-Channel FET Pulse width limited by maximum junction temperature. TYPICAL MAXIMUM 6 42 UNITS °C / W °C / W ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage V(BR)DSS STATIC VG |
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NIKO-SEM |
N-Channel MOSFET |
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NIKO-SEM |
N-Channel Transistor |
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NIKO-SEM |
N-Channel MOSFET |
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Niko |
P-Channel MOSFET te Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) RDS(ON) gfs VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VDS = 0V, VGS = ±20V VDS = -24V, VGS = 0V VDS = -2 |
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Niko |
N-Channel Enhancement Mode Field Effect Transistor rent On-State Drain Current1 V(BR)DSS VGS(th) IGSS IDSS ID(ON) STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 55 °C VDS = 5V, VGS = 10V LIMITS UNIT MIN TYP MAX 30 1 1.5 2.5 |
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Desde 2024. D4U Semiconductor.
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