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P2003ND5G |
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| Part Number | P2003ND5G |
| Manufacturer | NIKO-SEM |
| Description | NIKO-SEM N- & P-Channel Enhancement Mode Field Effect Transistor P2003ND5G TO-252-5 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) N-Channel 30 20mΩ P-Channel -30 36mΩ ID 25A -19A D1 ... |
| Features |
Pulse width limited by maximum junction temperature.
TYPICAL
MAXIMUM 6 42
UNITS °C / W °C / W
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage
V(BR)DSS
STATIC VGS = 0V, ID = 250μA VGS = 0V, ID = -250μA
LIMITS
UNIT
MIN TYP MAX
N-Ch 30 V
P-Ch -30
REV 1.0
May-21-2009 1
NIKO-SEM
N- & P-Channel Enhancement Mode Field Effect Transistor
P2003ND5G
TO-252-5
Halogen-Free & Lead-Free
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-State Resis... |
| Document |
 P2003ND5G Data Sheet
PDF 215.28KB |
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