| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Nanxin |
P-Channel Enhancement MOSFET ·Low On resistance. ·-4.5V drive. ·RoHS compliant. Si4435 P-Channel Enhancement MOSFET Si4435 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS |
|
|
|
|
Nanxin |
N+P Complementary Enhancement MOSFET ·Low On resistance. ·+4.5V drive. ·RoHS compliant. Si460N6+P Complementary Enhancement MOSFET Si4606 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Conditions Drain-to-Source Voltage Gate-to-Source Volta |
|
|
|
|
Nanxin |
Dual P-Channel MOSFET ·Low On resistance. ·-4.5V drive. ·RoHS compliant. Si4953 Dual P-Channel Enhancement MOSFET Si4953 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGS |
|
|
|
|
Nanxin |
P-Channel Enhancement MOSFET ·Low On resistance. ·-4.5V drive. ·RoHS compliant. Si4407 P-Channel Enhancement MOSFET Si4407 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS |
|
Desde 2024. D4U Semiconductor.
|