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Si4953 |
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| Part Number | Si4953 |
| Manufacturer | Nanxin |
| Description | Features ·Low On resistance. ·-4.5V drive. ·RoHS compliant. Si4953 Dual P-Channel Enhancement MOSFET Si4953 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol ... |
| Features |
·Low On resistance. ·-4.5V drive. ·RoHS compliant. Si4953 Dual P-Channel Enhancement MOSFET Si4953 Package Dimensions Specifications Absolute Maximum Ratings at Ta=250C Parameter Symbol Drain-to-Source Voltage VDSS Gate-to-Source Voltage VGSS Drain Current (DC) ID Drain Current (Pulse) IDP Allowable Power Dissipation PD Total Dissipation PT Channel Temperature Tch Storage Temperature Tstg Conditions PW≤10uS, duty cycle≤1% Mounted on a ceramic board (1000mm2×0.8mm) 1unit Mounted on a ceramic board (1000mm2×0.8mm) Ratings -30 +20 -5.2 -20 1.3 1.7 150 -55~+150 Unit V V A A... |
| Document |
 Si4953 Data Sheet
PDF 215.73KB |
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Desde 2024. D4U Semiconductor.
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