NXP LF1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	LF198FE	NXP	Sample-and-hold amplifiers • Operates from ±5V to ±18V supplies • Less than 10µs acquisition time • TTL, PMOS, CMOS compatible logic input • 0.5mV typical hold step at CH=0.01µF • Low input offset • 0.002% gain accuracy • Low output noise in hold mode • Input characteristics
2	BLF1046	NXP	UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 1 GHz). APPLICATIONS • Communication transmitter applications in th
3	MK02FN128VLF10	NXP	Microcontroller interactive KINETISKMCUSELGD application wizards and a dynamic product selector. The Reference Manual contains a comprehensive description of the structure and function (operation) of a device. K02P64M100SFARM The Data Sheet includes electrical ch
4	MKV44F64VLF16	NXP	168MHz ARM Cortex-M4 core based Microcontroller include; dual 12-bit analog-to-digital converters with 240ns conversion time, up to 30 PWM channels for support of multi-motor systems, eFlexPWM module with 312 ps resolution for digital power conversion applications, programmable delay block, memory
5	BLF183XR	NXP	Power LDMOS transistor and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 600 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Haza
6	LF198	NXP	Sample-and-hold amplifiers • Operates from ±5V to ±18V supplies • Less than 10µs acquisition time • TTL, PMOS, CMOS compatible logic input • 0.5mV typical hold step at CH=0.01µF • Low input offset • 0.002% gain accuracy • Low output noise in hold mode • Input characteristics
7	BLF1043	NXP	UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on mounting base eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 1 GHz). handbook, halfpage BLF1043 PINNING - SOT538A PIN 1 2 3
8	BLF1047	NXP	UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 1 GHz). handbook, halfpage BLF1047 PINNING - SOT541A PIN 1 2 3 dra
9	BLF1820-70	NXP	UHF power LDMOS transistor • Typical 2-tone performance at a supply voltage of 26 V and IDQ of 500 mA: – Output power = 65 W (PEP) – Gain = 12 dB – Efficiency = 32% – dim = −26 dBc • Easy power control • Excellent ruggedness • High power gain • Excellent thermal stability • De
10	MKV42F128VLF16	NXP	168MHz ARM Cortex-M4 core based Microcontroller include; dual 12-bit analog-to-digital converters with 240ns conversion time, up to 30 PWM channels for support of multi-motor systems, eFlexPWM module with 312 ps resolution for digital power conversion applications, programmable delay block, memory
11	MKV42F64VLF16	NXP	168MHz ARM Cortex-M4 core based Microcontroller include; dual 12-bit analog-to-digital converters with 240ns conversion time, up to 30 PWM channels for support of multi-motor systems, eFlexPWM module with 312 ps resolution for digital power conversion applications, programmable delay block, memory
12	MK02FN64VLF10	NXP	Microcontroller interactive KINETISKMCUSELGD application wizards and a dynamic product selector. The Reference Manual contains a comprehensive description of the structure and function (operation) of a device. K02P64M100SFARM The Data Sheet includes electrical ch
13	BLF10H6600PS	NXP	Power LDMOS transistor and benefits  Excellent ruggedness (VSWR  40 : 1 through all phases)  Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W  High power gain  High efficiency  Designed for broadband operation (400 MHz to 1000 MHz)  Internal input match
14	BLF10M6200	NXP	Power LDMOS transistor and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (700 MHz to 1000 MHz)  Internally matched for ease of use  Compliant to Directiv
15	BLF174XRS	NXP	Power LDMOS transistor and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 128 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Haza
16	BLF178P	NXP	Power LDMOS transistor and benefits  Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:  Output power = 1200 W  Power gain = 28.5 dB  Efficiency = 75 %  Easy power control  Integrated ESD p
17	BLF178XRS	NXP	Power LDMOS transistor and benefits  Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:  Output power = 1400 W  Power gain = 28 dB  Efficiency = 72 %  Easy power control  Integrated ESD pro
18	BLF1048	NXP	UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 1 GHz). APPLICATIONS • Communication transmitter applications in th
19	BLF145	NXP	HF power MOS transistor • High power gain • Low noise figure • Good thermal stability • Withstands full load mismatch. d k, halfpage BLF145 PIN CONFIGURATION 1 4 DESCRIPTION g Silicon N-channel enhancement mode vertical D-MOS transistor designed for SSB transmitter ap
20	BLF147	NXP	VHF power MOS transistor • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch. ook, halfpage 4 BLF147 PIN CONFIGURATION 3 d DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transist