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BLF10M6200 |
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| Part Number | BLF10M6200 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | 200 W LDMOS power transistor for ISM applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production ... |
| Features |
Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (700 MHz to 1000 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3 Applications RF power amplifiers for ISM applications in the 700 MHz to 1000 MHz frequency range. NXP Semiconductors BLF10M6200; BLF10M6LS200 Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description BLF10M6200 (SOT502A) 1 drain 2 gate 3 source BLF10M6LS200 (SOT50... |
| Document |
 BLF10M6200 Data Sheet
PDF 135.98KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BLF10M6200 |
Ampleon |
Power LDMOS transistor |
|
| 2 | BLF10M6135 |
Ampleon |
Power LDMOS transistor |
|
| 3 | BLF10M6135 |
NXP |
Power LDMOS transistor |
|
| 4 | BLF10M6160 |
Ampleon |
Power LDMOS transistor |
|
| 5 | BLF10M6160 |
NXP |
Power LDMOS transistor |
|
| 6 | BLF10M6LS135 |
Ampleon |
Power LDMOS transistor |
|
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