NXP BLF Hoja de datos

No.	parte #	Fabricante	Descripción
1	BLF6G10LS-135R	NXP Semiconductors	Power LDMOS transistor I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA: N Average output power = 26.5 W N Power gain = 21.0 dB N Efﬁciency = 28.0 % N ACPR = −39 dBc I Easy power control I Integrate
2	BLF872	NXP Semiconductors	UHF power LDMOS transistor s Typical 2-tone performance at 860 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 0.9 A: x Peak envelope power load power PL(PEP) = 300 W x Gain Gp = 15 dB x Drain efﬁciency ηD = 43 % x Third order intermodulation di
3	BLF888	NXP	UHF Power LDMOS Transistor I 2-tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 1.4 A: N Peak envelope power load power = 500 W N Power gain = 20 dB N Drain efﬁciency = 45 % N Third order intermodulation distortion = dBc
4	BLF378	NXP	VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Broadcast transmitter applications in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement
5	BLF6G38-10G	NXP Semiconductors	WiMAX power LDMOS transistor I Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 trafﬁc channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130
6	BLF861	NXP	UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (UHF band). APPLICATIONS • Communication transmitter applications in the U
7	BLF1046	NXP	UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 1 GHz). APPLICATIONS • Communication transmitter applications in th
8	BLF2045	NXP	UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation. APPLICATIONS • Communication transmitter applications (PCN/PCS) in the 1.
9	BLF2047	NXP	UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (1.8 to 2.2 GHz). • Internal input and output matching for high gain and e
10	BLF278	NXP	VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Broadcast transmitters in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertic
11	BLF346	NXP	VHF power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. APPLICATIONS • Linear amplifier applications in Television transmitters and transposers. DESCRIPTION Silicon N-channel enhancement mod
12	BLF368	NXP	VHF push-pull power MOS transistor • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability. DESCRIPTION Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for broadcast transmitter applicatio
13	BLF861A	NXP Semiconductors	UHF power LDMOS transistor • High power gain • Easy power control • Excellent ruggedness • Designed to withstand abrupt load mismatch errors • Source on underside eliminates DC isolators; reducing www.DataSheet4U.com common mode inductance • Designed for broadband operation (U
14	BLF573S	NXP Semiconductors	HF / VHF power LDMOS transistor and benefits Typical CW performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 900 mA: Average output power = 300 W Power gain = 27.2 dB Efficiency = 70 % Easy power control Integrated ESD protection Excellent rugge
15	BLF6G10S-45	NXP	Power LDMOS Transistor I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 350 mA: N Average output power = 1.0 W N Gain = 23 dB N Efﬁciency = 8 % N ACPR = −48.5 dBc I Easy power control I Integrated ESD prot
16	BLF6G22LS-100	NXP Semiconductors	Power LDMOS transistor and benefits Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: Average output power = 25 W Gain = 18.2 dB Efficiency = 29 % IMD3 = −37 dBc ACPR = −41 dBc Easy po
17	BLF888A	NXP	UHF Power LDMOS Transistor and benefits           Excellent ruggedness (VSWR  40 : 1 through all phases) Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W Suitable for CW UHF and ISM applications High power gain High efficiency Designed for broadband ope
18	BLF183XR	NXP	Power LDMOS transistor and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 600 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Haza
19	BLF574XRS	NXP	Power LDMOS transistor and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 500 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Haza
20	BLF644P	NXP	Broadband power LDMOS transistor and benefits  Integrated ESD protection  Excellent ruggedness  High power gain  High efficiency  Excellent reliability  Easy power control  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applicatio