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BLF6G10LS-135R |
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| Part Number | BLF6G10LS-135R |
| Manufacturer | NXP (https://www.nxp.com/) Semiconductors |
| Description | 135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test c... |
| Features |
I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA: N Average output power = 26.5 W N Power gain = 21.0 dB N Efficiency = 28.0 % N ACPR = −39 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)
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NXP Semiconductors
BLF6G10LS-135R
Power LDMOS transistor... |
| Document |
 BLF6G10LS-135R Data Sheet
PDF 134.06KB |
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