NTE MJE Hoja de datos

No.	parte #	Fabricante	Descripción
1	MJE13007	NTE	Silicon NPN Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2	MJE2955T	NTE	Silicon PNP Transistor D High Current Gain − Bandwidth Product Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB .
3	IH6108MJE	Intersil Corporation	8-Channel CMOS Analog Multiplexer • Ultra Low Leakage - ID(OFF) ≤ 100pA (Typ) • rDS(ON) < 400Ω Over Full Signal and Temperature Range • Power Supply Quiescent Current Less Than 100µA • ±14V Analog Signal Range • No SCR Latchup • Break-Before-Make Switching • Binary Address Control (3
4	IH6201MJE	Intersil Corporation	Dual CMOS Driver/Voltage Translator • Driven Direct from TTL or CMOS Logic • Translates Logic Levels Up to 30V Levels • Switches 20VACPP Signals When Used in Conjunction with the IH401A Varafet (As An Analog Gate) • tON ≤ 300ns & tOFF ≤ 200ns for 30V Level Shifts • Quiescent Supply Cur
5	MJE15031	NTE	Silicon Complementary Transistors D DC Current Gain Specified to 4A: hFE = = 40 20 Min MIn @ @ IICC = = 3A 4A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain−Bandwidth Product: fT = 30MHz Min @ IC = 500mA Absolute Maximum Ratings: Collec
6	MJE13006	NTE	Silicon NPN Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Continuous Base Curren
7	MJE340	NTE	Silicon NPN Transistor D Suitable for Transformerless, Line−Operated Equipment D High Power Dissipation Rating for High Reliability Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8	MJE3055T	NTE	Silicon NPN Transistor D High Current Gain − Bandwidth Product Absolute Maximum Ratings: (Note 1) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB .
9	IH5342MJE	Maxim Integrated Products	Dual/Quad RF/Video Switches
10	IH6108MJE883B	Intersil Corporation	8-Channel CMOS Analog Multiplexer • Ultra Low Leakage - ID(OFF) ≤ 100pA (Typ) • rDS(ON) < 400Ω Over Full Signal and Temperature Range • Power Supply Quiescent Current Less Than 100µA • ±14V Analog Signal Range • No SCR Latchup • Break-Before-Make Switching • Binary Address Control (3
11	MJE4343	NTE	Silicon NPN Transistor D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . .
12	MJE4353	NTE	Silicon PNP Transistor D High Collector−Emitter Sustaining Voltage: VCEO(sus) = 160V D High DC Current Gain: hFE = 35 Typ @ IC = 8A D Low Collector−Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 8A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . .
13	MJE15030	NTE	Silicon Complementary Transistors D DC Current Gain Specified to 4A: hFE = = 40 20 Min MIn @ @ IICC = = 3A 4A D Collector−Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain−Bandwidth Product: fT = 30MHz Min @ IC = 500mA Absolute Maximum Ratings: Collec
14	MJE180	NTE	Silicon NPN Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A Total Device Dissipation, PD TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15	MJE172	NTE	Silicon PNP Transistor D Collector−Emitter Sustaining Voltage: VCEO(sus) = 80V D DC Current Gain: hFE = 30 (Min) @ IC = 0.5A hFE = 12 (Min) @ IC = 1.5A D Current−Gain—Bandwidth Product: fT = 50MHz (Min) @ IC = 100mA D Annular Construction for Low Leakage: ICBO = 100nA (Ma
16	MJE13005	NTE	Silicon NPN Transistor D Reverse Bias SOA with Inductive Loads @ TC = +100C D 700V Blocking Capability Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V C