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MJE13006 |
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| Part Number | MJE13006 |
| Manufacturer | NTE |
| Description | The MJE13006 is a silicon NPN transistor in a TO−220 type package designed for high−voltage, high− speed power switching inductive circuits where fall time is critical. This device is particularly su... |
| Features |
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A
Continuous Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80W
Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ... |
| Document |
 MJE13006 Data Sheet
PDF 59.05KB |
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Desde 2024. D4U Semiconductor.
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