NTE 2N6 Hoja de datos

No.	parte #	Fabricante	Descripción
1	HGT1S12N60A4DS	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use
2	HGTP12N60B3	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
3	2N6028	NTE	Programmable Unijunction Transistor D Programmable − RBB, , IV, and IP D Low On−State Voltage − 1.5V Maximum @ IF = 50mA D Low Gate−to−Anode Leakage Current − 10nA Maximum D High Peak Output Voltage − 11V Typical D Low Offset Voltage − 0.35V Typical (RG = 10kW) Absolute Maximum Ratin
4	2N6796	Intersil Corporation	N-Channel Power MOSFET • 8A, 100V • rDS(ON) = 0.180Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Ordering Information PART NUMBER 2N6796 PACKAGE TO-205AF BRAND 2N6796
5	HGTP12N60A4D	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT use
6	JANS2N6849	International Rectifier	P-CHANNEL TRANSISTORS  Repetitive Avalanche Ratings  Dynamic dv/dt Rating  Hermetically Sealed  Simple Drive Requirements  ESD Rating: Class 1C per MIL-STD-750, Method 1020 They are well suited for applications such as switching power supplies, motor controls, inver
7	JANTXV2N6847	International Rectifier	POWER MOSFET P-CHANNEL(BVdss=-200V/ Rds(on)=1.5ohm/ Id=-2.5A) s s s s s Avalanche Energy Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Absolute Maximum Ratings Parameter I D @ VGS = -10V, TC = 25°C ID @ VGS = -10V, TC = 100°C IDM PD @ TC = 25°C VGS dv/dt TJ TST
8	2N6451	InterFET Corporation	N-Channel JFET • InterFET N0132L Geometry • Low Noise: 1.0 nV/√Hz Typical • High Gain: 15mS Minimum • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Audio Amplifiers • Low-Noise, High Gain Amplifiers • Low-Noise Preamplifiers Description The
9	HGT1S12N60B3S	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
10	HGTA32N60E2	Intersil Corporation	32A/ 600V N-Channel IGBT • 32A, 600V • Latch Free Operation • Typical Fall Time 620ns • High Input Impedance • Low Conduction Loss Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device ha
11	HGTG12N60D1	Intersil Corporation	N-Channel IGBT • 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transist
12	HGTG32N60E2	Intersil Corporation	N-Channel IGBT • 32A, 600V • Latch Free Operation • Typical Fall Time - 600ns • High Input Impedance • Low Conduction Loss COLLECTOR (BOTTOM SIDE METAL) Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and b
13	HGTP12N60C3	Intersil Corporation	N-Channel IGBT of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is
14	JANTX2N6794	International Rectifier	POWER MOSFET N-CHANNEL n Repetitive Avalanche Ratings n Dynamic dv/dt Rating n Hermetically Sealed n Simple Drive Requirements n Ease of Paralleling Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C Continuous D
15	JANTXV2N6794U	International Rectifier	REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS ! ! ! ! ! ! ! ! Surface Mount Small Footprint Alternative to TO-39 Package Hermetically Sealed Dynamic dv/dt Rating Avalanche Energy Rating Simple Drive Requirements Light Weight Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C ID @ VG
16	F2N60	Pan Jit International	PJF2N60 • 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A TO-220AB / ITO-220AB TO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In com
17	F12N65	Pan Jit International	650V N-CHANNEL MOSFET • 12A , 650V, RDS(ON)=0.8Ω@VGS=10V, ID=6.0A TO-220AB / ITO-220AB TO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In
18	2N6547	NTE	Silicon NPN Transistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Peak (Not
19	JANTX2N6849U	International Rectifier	100V P-CHANNEL MOSFET  Surface Mount  Small Footprint  Alternative to TO-39 Package  Hermetically Sealed  Dynamic dv/dt Rating  Avalanche Energy Rating  Simple Drive Requirements  Light Weight  ESD Rating: Class 1C per MIL-STD-750, Method 1020 Absolute Maximum R
20	2N6976	Intersil Corporation	N-Channel IGBTs • 5A, 400V and 500V • VCE(ON) 2V • TFI 1µs, 0.5µs • Low On-State Voltage • Fast Switching Speeds • High Input Impedance GATE Applications • Power Supplies • Motor Drives • Protection Circuits Terminal Diagram N-CHANNEL ENHANCEMENT MODE C G Descr