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F2N60 |
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| Part Number | F2N60 |
| Manufacturer | Pan Jit International |
| Description | PJP2N60 / PJF2N60 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A TO-220AB / ITO-220AB TO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Ful... |
| Features |
• 2A , 600V, RDS(ON)=4.6Ω@VGS=10V, ID=1A TO-220AB / ITO-220AB TO-220AB • Low ON Resistance • Fast Switching • Low Gate Charge • Fully Characterized Avalanche Voltage and Current • Specially Desigened for AC Adapter, Battery Charge and SMPS • In compliance with EU RoHs 2002/95/EC Directives 3 1 2 S D G ITO-220AB 1 2 G 3 D S MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 ORDERING INFORMATION INTERNAL SCHEMATIC DIAGRAM Drain TYPE PJP2N60 PJF2N60 MARKING P2N60 F2N60 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50P... |
| Document |
 F2N60 Data Sheet
PDF 185.84KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | F2N60 |
ROUM |
2A 600V N-channel Enhancement Mode Power MOSFET |
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| 2 | F2N60 |
UTC |
600V N-CHANNEL POWER MOSFET |
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| 3 | F2N60 |
Red Diamond Optoelectronics |
N-CHANNEL POWER MOSFET |
|
| 4 | F2001 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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| 5 | F2002 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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| 6 | F2003 |
Polyfet RF Devices |
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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