NIKO-SEM P10 Hoja de datos

No.	parte #	Fabricante	Descripción
1	P1065ETFS	NIKO-SEM	N-Channel MOSFET
2	P1010AT	NIKO-SEM	N-Channel MOSFET ain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) VGS = 0V, ID = 250A VDS = VGS, ID = 250A 100 V 2.5 3.5 4.5 IGSS VDS = 0V, VGS = ±25V ±100 nA VDS = 80V, VGS = 0V IDSS VDS
3	P1006BTF	NIKO-SEM	N-Channel Transistor
4	P1070ETF	NIKO-SEM	N-Channel MOSFET
5	P1060ETF	NIKO-SEM	N-Channel MOSFET = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS STATIC VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V REV 1.0 1 M
6	P1010ATF	NIKO-SEM	N-Channel MOSFET P MAX Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) VGS = 0V, ID = 250A VDS = VGS, ID = 250A 100 V 2.5 3.5 4.5 IGSS VDS = 0V, VGS = ±25V ±100 nA VDS = 80V, VGS = 0V
7	P1003BKA	NIKO-SEM	N-Channel FET ARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS STATIC VGS = 0V, ID = 250µA V
8	P1006BT	NIKO-SEM	N-Channel Transistor
9	P1065ETF	NIKO-SEM	N-Channel MOSFET
10	P1060ETFS	NIKO-SEM	N-Channel MOSFET = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS STATIC VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±30V REV 1.0 1 M
11	P1006BK	NIKO-SEM	N-Channel MOSFET
12	P1004BD	Niko-Sem	N-Channel Enhancement Mode Field Effect Transistor e Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 32V, VGS = 0V VDS = 30V, VGS = 0V, TJ = 55 °C 40 1.7 2.0 3.0 ±100 1 10 µA nA V LIMI