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P1003BKA |
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| Part Number | P1003BKA |
| Manufacturer | NIKO-SEM |
| Description | NIKO-SEM N-Channel Enhancement Mode P1003BKA Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 9.8mΩ ID 44A D G S D DDD #1 S S S G G. GATE ... |
| Features |
ARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage
Zero Gate Voltage Drain Current
V(BR)DSS VGS(th) IGSS
IDSS
STATIC VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 55 °C
LIMITS MIN TYP MAX
UNIT
30 V
1 1.5 3
±100 nA
1 µA
10
REV 0.9
Apr-12-2011 1
NIKO-SEM
N-Channel Enhancement Mode
P1003BKA
Field Effect Transistor
PDFN 5x6P
Halogen-Free & Lead-Free
Drain-Source On-State Resistance1 Forward Transconductance1
RDS(... |
| Document |
 P1003BKA Data Sheet
PDF 231.92KB |
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