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NEC |
2SC2003 |
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NEC |
2SC2785 |
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NEC |
2SC2335 • Low collector saturation voltage: VCE(sat) = 1.0 V MAX. @IC = 3.0 A • Fast switching speed: tf = 1.0 µs MAX. @IC = 3.0 A • Wide base reverse-bias SOA: VCEX(SUS)1 = 450 V MIN. @IC = 3.0 A ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to |
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NEC |
NPN SILICON TRANSISTOR |
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NEC |
2SC2784 |
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NEC |
NPN Transistor • High Electrostatic-Discharge-Resistance. (E-B reverse bias, C= 2 300 p F) ESDR : TYP. 1 000 V • Low Cre • High fT Cre;:;;;: 3.0 pF (Ves= 30 V) fT ;ii;; 50 MHz (Vce = 30 V, Ie = -10 mA) ~ e_~;....+-+--+-; N c:i L..l-+..,j,....-ł--1+1 00 rti ABSOLU |
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VITALCONN |
SFP/SFP+ CAGES&CONNECTOR |
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NEC |
NPN SILICON TRANSISTOR |
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NEC |
NPN Silicon Transistor • Complementary transistor with 2SA1154 • High PT in small dimension and high voltage PT = 1 W, VCEO = 60 V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage Collector to emitter voltage Emitter to base voltage Colle |
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NEC |
NPN SIlicon Transistor |
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NEC |
NPN Silicon Transistor |
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NEC |
NPN SILICON TRANSISTOR |
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NEC Electronics |
Transistors |
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NEC |
NPN Silicon Transistor |
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NEC |
NPN SILICON TRANSISTOR |
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NEC |
Silicon Power Transistor |
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NEC |
NPN SILICON TRANSISTOR |
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NEC |
2SC2958 • Ideal for use of high voltage current such as TV vertical deflection (drive and output), audio output, pin cushion correction • Complementary transistor with 2SA1221 and 2SA1222 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959 ABSOLUTE |
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NEC |
2SC2570A • Low noise and high gain • Wide dynamic range : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA : NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 15 mA ORDERING INFORMATION Part Number 2SC2570A 2SC2570A-T Quantity Loose p |
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NEC |
2SC2721 • Complementary transistor with 2SA1154 • High PT in small dimension and high voltage PT = 1 W, VCEO = 60 V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Collector to base voltage Collector to emitter voltage Emitter to base voltage Colle |
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Desde 2024. D4U Semiconductor.
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