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2SC2756 NEC NPN Silicon Transistor Datasheet


NEC
2SC2756
Part Number 2SC2756
Manufacturer NEC
Description ...
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Document Datasheet 2SC2756 datasheet pdf (86.58KB)




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2SC2756 Similar Datasheet

Part Number Description
2SC2703
manufacturer
Toshiba Semiconductor
Silicon NPN TRANSISTOR
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2703 Audio Power Amplifier Applications 2SC2703 Unit: mm • High DC current gain: hFE = 100 to 320 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 5 1 0.1 900 150 −55 to 150 Unit V V V A A mW °C °C Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturat...
2SC2703
manufacturer
JCET
NPN Transistor
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2703 TRANSISTOR (NPN) FEATURES High DC Current Gain: hFE=100-320 TO-92L 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current -Continuous PC Collector Power Dissipation TJ Junction Temperature Tstg Storage Temperature Value 30 30 5 1 0.75 150 -55-150 Unit V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=1mA,I...
2SC2703
manufacturer
BLUE ROCKET ELECTRONICS
Silicon NPN transistor
TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features :hFE=100~320。 High DC current gain: hFE=100~320. / Applications 。 Audio frequency power amplifier applications. / Equivalent Circuit / Pinning 123 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 100~200 Y 160~320 http://www.fsbrec.com 1/6 2SC2703(BR3DG2703L) Rev.C Feb.-2015 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO ...
2SC2704
manufacturer
Toshiba
Silicon NPN Transistor
) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS- FEATURES : . Complementary to 2SA1144. . Small Collector Output Capacitance : C b=l . 8pF(Typ. . High Transition Frequency : fT =200MHz(Typ. Unit in mm 7. 9 MAX. H ^aixQl5 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25QC) Junction Temperature Storage Temperature Range SYMBOL vCBO vCEO vEBO ic IB PC Tstg RATING 150 150 50 10 150 -55-150 UNIT mA mA °C 1. EMITTER 2. COLLECTOR (HEAT SINK) 3. BASE JEDEC TO-l?6 EIAJ TOSHIBA 8 — 8 PI A Mounting Kit No. AC46C Weight : 0.72g E...
2SC2705
manufacturer
Toshiba Semiconductor
TRANSISTOR
2SC2705 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2705 Audio Frequency Amplifier Applications Unit: mm • • • Small collector output capacitance: Cob = 1.8 pF (typ.) High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1145. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 150 150 5 50 5 800 150 −55 to 150 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off...
2SC2705
manufacturer
INCHANGE
NPN Transistor
·Collector-Emitter sustaining Voltage : VCEO=150V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio Frequency Amplifier Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 mA IB Base Current- Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 5 mA 800 mW 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2705 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power T...
2SC2705
manufacturer
BLUE ROCKET ELECTRONICS
Silicon NPN transistor
TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features ,, 2SA1145 。 High transition frequency, small collector output capacitance complementary pair with 2SA1145. / Applications 。 Audio frequency amplifier applications. / Equivalent Circuit / Pinning 123 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 80~160 Y 120~240 http://www.fsbrec.com 1/6 2SC2705 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Base Current Collector Power Dissipation Junction Temperature Storage ...
2SC2706
manufacturer
INCHANGE
NPN Transistor
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Complement to Type 2SA1146 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency low power amplifier applications ·Recommend for 70W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 140 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 100 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2706 i...
2SC2706
manufacturer
SavantIC
SILICON POWER TRANSISTOR
·With TO-3P(I) package ·High power dissipation APPLICATIONS ·For audio power amplifier and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 140 140 5 10 2 100 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transisto...
2SC2706
manufacturer
Toshiba
Silicon NPN Transistor
: 2SC2706 )— SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SA1146. . Recommended for 70W audio frequency amplifier output stage. . High transition frequency : f T=90MHz (Typ. 5, 9 MAX.. J. . Unit in mm a2±CL2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25QC) Junction Temperature Storage Temperature Range SYMBOL v CBO v CEO VEBO ic IB -stg RATING 140 140 10 100 150 -55-150 UNIT oo V +1 5.45x0.2 1. BASE 2. COLLECTOR CHEAT SINK) 3. EMITTER TOSHIBA 2-16B1A Weight : 4.1 ELECTRICAL ...




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