| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NEC |
2SK3053 • Low On-State Resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 13 A) • Low Ciss : Ciss = 790 pF TYP. • Built-in Gate Protection Diode • Isolated TO-220 package (Isolated TO-220) ABSOLUTE MAXIMUM RATI |
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NEC |
2SK3057 • Low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4 V, ID = 23 A) • Low Ciss: Ciss = 2100 pF TYP. • Built-in gate protection diode • Isolated TO-220 package ORDERING INFORMATION PART NUMBER PACKAG |
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NEC |
N-CHANNEL POWER MOS FET • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 2400 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3060 TO-220AB 2S |
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Infineon Technologies |
Small Form Factor Multimode 850 nm 1.0625 GBd Fibre Channel 1.25 Gigabit Ethernet Transceiver 2x5 Pinning with LC Connector • Small Form Factor transceiver • Complies with Fibre Channel and Gigabit Ethernet standards • Excellent EMI performance • RJ-45 style LC™ connector system • Available with or without collar • Half the size of SC Duplex 1x9 transceiver • Single power |
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Infineon Technologies |
Small Form Factor Multimode 850 nm 1.0625 GBd Fibre Channel 1.3 Gigabit Ethernet 2x5 Transceiver with LC Connector • Small Form Factor transceiver • Complies with Fibre Channel and Gigabit Ethernet standards • Excellent EMI performance • RJ-45 style LC™ connector system • Available with or without collar • Half the size of SC Duplex 1x9 transceiver • Single power |
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Infineon Technologies |
Small Form Factor Multimode 850 nm 1.0625 GBd Fibre Channel 1.25 Gigabit Ethernet Transceiver 2x5 Pinning with LC Connector • Small Form Factor transceiver • Complies with Fibre Channel and Gigabit Ethernet standards • Excellent EMI performance • RJ-45 style LC™ connector system • Available with or without collar • Half the size of SC Duplex 1x9 transceiver • Single power |
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NEC |
N-Channel MOSFET • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 5200 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (V |
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Infineon Technologies |
SFP - Small Form-factor Pluggable Multimode 850 nm 1.0625 Gbit/s Fibre Channel 1.25 Gigabit Ethernet Transceiver with LC Connector • Small Form-factor Pluggable (SFP) transceiver • Fully SFP MSA compliant1) • Advanced release mechanism – Easy access, even in belly to belly applications – Grip for easy access – no tool is needed – Color coded black (multimode) File: 1114 • Excell |
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Infineon Technologies |
Small Form Factor Multimode 850 nm 1.0625 GBd Fibre Channel 1.25 Gigabit Ethernet Transceiver 2x5 Pinning with LC Connector • Small Form Factor transceiver • Complies with Fibre Channel and Gigabit Ethernet standards • Excellent EMI performance • RJ-45 style LC™ connector system • Available with or without collar • Half the size of SC Duplex 1x9 transceiver • Single power |
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Infineon Technologies |
Small Form Factor Multimode 850 nm 1.0625 GBd Fibre Channel 1.25 Gigabit Ethernet Transceiver 2x5 Pinning with LC Connector • Small Form Factor transceiver • Complies with Fibre Channel and Gigabit Ethernet standards • Excellent EMI performance • RJ-45 style LC™ connector system • Available with or without collar • Half the size of SC Duplex 1x9 transceiver • Single power |
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NEC |
N-CHANNEL POWER MOS FET • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 20 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 2400 pF TYP. • Built-in gate protection diode ORDERING INFORMATION PART NUMBER PACKAGE 2SK3060 TO-220AB 2S |
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NEC |
N-Channel MOSFET • Low On-State Resistance RDS(on)1 = 45 mΩ MAX. (VGS = 10 V, ID = 13 A) RDS(on)2 = 70 mΩ MAX. (VGS = 4.0 V, ID = 13 A) • Low Ciss : Ciss = 790 pF TYP. • Built-in Gate Protection Diode • Isolated TO-220 package (Isolated TO-220) ABSOLUTE MAXIMUM RATI |
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NEC |
N-Channel MOSFET • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 5200 pF TYP. • Built-in gate protection diode • Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) D |
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NEC |
2SK3056 • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 16 A) • Low Ciss : Ciss = 920 pF TYP. • Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (V |
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NEC |
2SK3055 • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A) • Low Ciss : Ciss = 920 pF TYP. • Built-in Gate Protection Diode • Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) D |
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NEC |
N-Channel MOSFET • Can be driven by a 2.5-V power source • Low gate cut-off voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS= 0 V) Gate to Source Voltage (VDS= 0 V) Drain Current (DC) Drain Current (pulse) Note VDSS VGSS ID(DC) ID(pulse) PT |
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NEC |
N-Channel MOSFET • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 15 A) • Low Ciss : Ciss = 920 pF TYP. • Built-in Gate Protection Diode • Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) D |
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NEC |
N-Channel MOSFET • Low On-State Resistance RDS(on)1 = 34 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 50 mΩ MAX. (VGS = 4.0 V, ID = 16 A) • Low Ciss : Ciss = 920 pF TYP. • Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VG |
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NEC |
N-Channel MOSFET • Low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4 V, ID = 23 A) • Low Ciss: Ciss = 2100 pF TYP. • Built-in gate protection diode • Isolated TO-220 package ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drai |
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NEC |
N-Channel MOSFET • Super Low On-State Resistance RDS(on)1 = 17 mΩ MAX. (VGS = 10 V, ID = 28 A) RDS(on)2 = 27 mΩ MAX. (VGS = 4.0 V, ID = 28 A) • Low Ciss : Ciss = 2100 pF (TYP.) • Built-in Gate Protection Diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Vo |
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Desde 2024. D4U Semiconductor.
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