Busque con el número de pieza junto con el fabricante o la descripción
2SK3062 |
Click to view a larger image
| Part Number | 2SK3062 |
| Manufacturer | NEC |
| Description | This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12... |
| Features |
• Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID = 35 A) • Low Ciss: Ciss = 5200 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (Pulse) Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg 60 ±20 +20, −10 ±70 ±280 100 1.5 150 –55 to +150 35 122.5 V V V A A W W °C °C A mJ Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel T... |
| Document |
 2SK3062 Data Sheet
PDF 69.94KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|