| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NEC |
2SC3631 |
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NEC |
2SC3616 |
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NEC |
NPN Transistor |
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NEC |
2SC3615 |
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NEC |
NPN Transistor |
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NEC |
2SC3622 www.DataSheet4U.com PACKAGE DRAWING (UNIT: mm) • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • Low VCE(sat): • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A) ABSOLUTE MAXIMUM RATINGS |
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NEC |
2SC3632-Z |
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NEC |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR • High Voltage VCEO = 400 V • High Speed tf < 0.7 μs • Complement to 2SA1412-Z Note 5.6 ±0.3 9.5 ±0.5 2.3 ±0.2 0.5 ±0.1 Note 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emi |
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NEC |
2SC3616 |
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NEC |
NPN SILICON EPITAXIAL TRANSISTOR www.DataSheet4U.com PACKAGE DRAWING (UNIT: mm) • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • Low VCE(sat): • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A) ABSOLUTE MAXIMUM RATINGS |
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NEC |
NPN EPITAXIAL SILICON TRANSISTOR • Low noise : NF = 2.1 dB TYP. @ f = 2.0 GHz • High power gain : GA = 10 dB TYP. @ f = 2.0 GHz C 3.8 MIN. 3.8 MIN. B PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation |
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NEC |
NPN EPITAXIAL SILICON TRANSISTOR • Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz • High power gain : GA = 12 dB TYP. @ f = 2.0 GHz C 3.8 MIN. 3.8 MIN. B PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation |
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NEC |
AUDIO FREQUENCY AMPLIFIER / SWITCHING NPN SILICON EPITAXIAL TRANSISTOR |
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NEC |
NPN Transistor |
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NEC |
NPN SILICON EPITAXIAL TRANSISTOR www.DataSheet4U.com PACKAGE DRAWING (UNIT: mm) • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • Low VCE(sat): • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A) ABSOLUTE MAXIMUM RATINGS |
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NEC |
NPN SILICON TRANSISTOR • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage C |
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NEC |
NPN SILICON TRANSISTOR |
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NEC |
NPN SILICON TRANSISTOR |
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NEC |
NPN Transistor • NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance |
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NEC |
NPN SILICON TRANSISTOR • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage C |
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Desde 2024. D4U Semiconductor.
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