2SC3623 |
Part Number | 2SC3623 |
Manufacturer | NEC |
Description | of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these cir... |
Features |
• High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) PT Tj Tstg Ratings 2SC3623 2SC3623A 60 50 12 15 150 250 150 −55 to +150 Unit V V V mA mW °C °C PACKAGE DRAWING (UNIT: mm) Electrode connection 1. Emitter (E) 2. Collector (C) 3.... |
Document |
2SC3623 Data Sheet
PDF 125.18KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SC3620 |
Toshiba Semiconductor |
Silicon NPN Transistor | |
2 | 2SC3621 |
Toshiba Semiconductor |
NPN Transistor | |
3 | 2SC3621 |
INCHANGE |
NPN Transistor | |
4 | 2SC3622 |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR | |
5 | 2SC3622A |
NEC |
NPN SILICON EPITAXIAL TRANSISTOR | |
6 | 2SC3623A |
NEC |
NPN SILICON TRANSISTOR |