| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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NEC |
2SB1669 • High DC current amplifier rate hFE ≥ 100 (VCE = −5.0 V, IC = −0.5 A) • Z type available for surface mounting supported prodcuts ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base v |
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NEC |
2SB734 |
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NEC |
2SB1094 • The 2SB1094 features ratings covering a wide range of applications and is ideal for power supplies or a variety of drives in audio and other equipment.: VCEO ≥ −60 V, VEBO ≥ −7.0 V, IC(DC) ≤ −3.0 A • Mold package that does not require an insulating |
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NEC |
2SB601 • High-DC current gain due to Darlington connection • Low collector saturation voltage • Low collector cutoff current • Ideal for use in direct drive from IC output for magnet drivers such as treminal equipment or cash registers PACKAGE DRAWING (UNI |
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NEC |
2SB1318 |
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NEC |
2SB546 se breakdown votage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IC=-0.5mA; IE=0 IE=-0.5mA; IB=0 IC=-500m A;IB=-50m A VCB=-150V; IE=0 VEB=-5V; IC |
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NEC |
2SB1261-Z • High hFE hFE = 100 to 400 • Low VCE(sat) VCE(sat) ≤ 0.3 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −60 V Emitter to Base Voltage VEBO −7.0 V Collector Current (DC) IC |
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NEC |
2SB1151 |
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NEC |
2SB1116 • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose PT = 0.75 W, VCEO = −50/−60 V, IC(DC) = −1.0 A • Complementary transistor with 2SD1616 and 1616A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) |
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NEC |
2SB733 |
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NEC |
2SB1453 • High DC current amplifier ratio hFE ≥ 100 (VCE = −5 V, IC = −0.5 A) • Mold package that does not require an insulating board or insulation bushing ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltag |
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NEC |
2SB546A |
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NEC |
2SB1115 |
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NEC |
2SB546 se breakdown votage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-10mA; IB=0 IC=-0.5mA; IE=0 IE=-0.5mA; IB=0 IC=-500m A;IB=-50m A VCB=-150V; IE=0 VEB=-5V; IC |
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NEC |
2SB605 |
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NEC |
NPN/PNP Silicon Transistor |
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NEC |
PNP SILICON POWER TRANSISTOR • Low saturation voltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = −2 V, IC = −1 A) • Less cramping space required due to small and thin package and reducing the trouble for attachment to |
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NEC |
2SB1150 |
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NEC |
2SB963-Z • High Gain hFE = 2000 to 3000 • Complement to 2SD1286-Z PACKAGE DRAWING (Unit: mm) 6.5 ±0.2 5.0 ±0.2 4.4 ±0.2 4 Note 1.5 +0.2 −0.1 2.3 ±0.2 0.5 ±0.1 Note 5.6 ±0.3 9.5 ±0.5 5.5 ±0.2 123 1.0 ±0.5 0.4 MIN. 0.5 TYP. 2.5 ±0.5 ABSOLUTE MAXIMUM |
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NEC |
2SB1068 |
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Desde 2024. D4U Semiconductor.
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