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MotorolaInc |
SCHOTTKY BARRIER RECTIFIERS chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low –voltage, high –frequency inverters, free wheeling diodes, and polarity protection diodes. • Extremely Low vF • L |
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MotorolaInc |
SCHOTTKY BARRIER RECTIFIERS chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low –voltage, high –frequency inverters, free wheeling diodes, and polarity protection diodes. • Extremely Low vF • L |
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MotorolaInc |
Zener Voltage Regulator Diodes • Surge Rating of 98 Watts @ 1 ms • Maximum Limits Guaranteed On Up To Six Electrical Parameters • Package No Larger Than the Conventional 1 Watt Package Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All |
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MotorolaInc |
SCHOTTKY BARRIER RECTIFIERS chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low –voltage, high –frequency inverters, free wheeling diodes, and polarity protection diodes. • Extremely Low vF • L |
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MotorolaInc |
SCHOTTKY BARRIER RECTIFIERS chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low –voltage, high –frequency inverters, free wheeling diodes, and polarity protection diodes. • Extremely Low vF • L |
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MotorolaInc |
SCHOTTKY BARRIER RECTIFIERS chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low –voltage, high –frequency inverters, free wheeling diodes, and polarity protection diodes. • Extremely Low vF • L |
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MotorolaInc |
SCHOTTKY BARRIER RECTIFIERS chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low –voltage, high –frequency inverters, free wheeling diodes, and polarity protection diodes. • Extremely Low vF • L |
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Desde 2024. D4U Semiconductor.
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