Busque con el número de pieza junto con el fabricante o la descripción
1N5818 |
Click to view a larger image
| Part Number | 1N5818 |
| Manufacturer | MotorolaInc |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the... |
| Features |
chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low –voltage, high –frequency inverters, free wheeling diodes, and polarity protection diodes. • Extremely Low vF • Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency Mechanical Characteristics • Case: Epoxy, Molded • Weight: 0.4 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/... |
| Document |
 1N5818 Data Sheet
PDF 96.28KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|