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Motorola |
Power MOSFET |
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Motorola |
TMOS POWER FET Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature G S TMOS POWER FET 1.0 AMPERES 500 VOLTS RDS(on) = 5.0 OHM ® D CASE 221A –06, Style 5 TO –220AB M |
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Motorola |
Power MOSFET |
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Motorola |
Power Field Effect Transistor |
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Motorola |
TMOS POWER FET Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM ® D G S CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS |
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Motorola |
TMOS POWER FET Pulse (tp ≤ 10 µs) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain –to –Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25 Ω) The |
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Motorola |
POWER FIELD EFFECT TRANSISTOR |
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Motorola |
TMOS POWER FET Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature G S TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS ® D CASE 221A –06, Style 5 TO –220AB M |
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Motorola |
POWER FIELD EFFECT TRANSISTOR |
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Motorola |
MTP30N08M |
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Motorola |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature G S TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM ® D CASE |
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Motorola |
Power Field Effect Transistor |
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Motorola |
Power Field Effect Transistor |
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Motorola |
Power MOSFET |
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Motorola |
Power MOSFET |
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Motorola |
Power MOSFET |
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Motorola |
Power MOSFET |
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Motorola |
TMOS POWER FET o –Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS ® D G S CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage |
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Motorola |
Power Field Effect Transistor |
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Motorola |
Power Field Effect Transistor |
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Desde 2024. D4U Semiconductor.
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