Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
MTP3N50E |
| Part Number | MTP3N50E |
| Manufacturer | ON Semiconductor |
| Title | TMOS E-FET |
| Description | MTP3N50E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fas. |
| Features | 3.0 AMPERES, 500 VOLTS RDS(on) = 3.0 W TO−220AB CASE 221A−06 Style 5 D ®G S © Semiconductor Components Industries, LLC, 2006 1 August, 2006 − Rev. 2 Publication Order Number: MTP3N50E/D MTP3N50E MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−Source Voltage Drain−Gate Voltage (RGS = 1.0 MΩ) Gate−Source Voltage — Continuous Gate−Source Voltage — Non−repe. |
MTP3N50E |
| Part Number | MTP3N50E |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·Popular AC-DC applications ·Powe. |
| Features |
·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·Popular AC-DC applications ·Power supply ·Switching applications INCHANGE Semiconductor MTP3N50E ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-So. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MTP3N50 |
Motorola |
Power Field Effect Transistor |
|
| 2 | MTP3N55 |
STI |
High Voltage Power MOSFET |
|
| 3 | MTP3N55 |
Motorola |
Power Field Effect Transistor |
|
| 4 | MTP3N100 |
Motorola |
Power MOSFET |
|
| 5 | MTP3N100E |
Motorola |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
|
| 6 | MTP3N120E |
Motorola |
TMOS POWER FET 3.0 AMPERES 1000 VOLTS |
|
| 7 | MTP3N25E |
Motorola |
TMOS POWER FET 3.0 AMPERES 250 VOLTS |
|
| 8 | MTP3N35 |
Fairchild Semiconductor |
N-Channel Power MOSFETs |
|
| 9 | MTP3N60 |
ST Microelectronics |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
|
| 10 | MTP3N60 |
Motorola |
Power Field Effect Transistor |
|
Desde 2024. D4U Semiconductor.
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