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Motorola |
Switching Diode • Very Low Leakage (≤ 500 pA) promotes extended battery life by decreasing energy waste • Offered in four Surface Mount package types • Available in 8 mm Tape and Reel in quantities of 3,000 Applications • ESD Protection • Reverse Polarity Protectio |
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Motorola |
Dual Switching Diode Common Cathode t Vdc µAdc 1. Continuous package improvements have enhanced these guaranteed Maximum Ratings as follows: PD = 1.0 W @ TC = 25°C, Derate above 25°C 8.0 mW/°C, TJ = –65 to +150°C, θJC = 125°C/W. Motorola Small –Signal Transistors, FETs and Diodes De |
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Motorola |
NPN Low Voltage Output Amplifier Surface Mount |
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Motorola |
Switching Diode • SOD –123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time 1 Cathode MMSD914T1 Motorola Preferred Device 2 Anode 2 1 CASE 425 –04, STYLE 1 SOD –123 MAXIMUM RATINGS Rating Symbol Continuous Reverse Voltage Peak Forward |
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Motorola |
SOD-123 Schottky Barrier Diodes citance (VR = 15 Volts, f = 1.0 MHz) (VR = 20 Volts, f = 1.0 MHz) Reverse Leakage (VR = 25 V) (VR = 35 V) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) MMSD301T1 MMSD701T1 CT MMSD301T1 MMSD701T1 CT MMSD301T1 MMSD701T1 IR M |
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Motorola |
General Purpose Amplifier Transistor |
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Motorola |
General Purpose Amplifier Transistor |
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Motorola |
NPN General Purpose Amplifier Transistor Surface Mount |
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Motorola |
SOD-123 Schottky Barrier Diodes citance (VR = 15 Volts, f = 1.0 MHz) (VR = 20 Volts, f = 1.0 MHz) Reverse Leakage (VR = 25 V) (VR = 35 V) Forward Voltage (IF = 1.0 mAdc) (IF = 10 mA) (IF = 1.0 mAdc) (IF = 10 mA) MMSD301T1 MMSD701T1 CT MMSD301T1 MMSD701T1 CT MMSD301T1 MMSD701T1 IR M |
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Motorola |
(MSD601-RT1/-ST1) NPN General Purpose Amplifier Transistors Surface Mount Current Gain(1) (VCE = 10 Vdc, IC = 2.0 mAdc) (VCE = 2.0 Vdc, IC = 100 mAdc) Collector –Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) 1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%. MSD601 –RT1 MSD601 –ST1 Symbol V(BR)CEO V(BR)CBO V(BR)EBO I |
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Motorola |
(MSD601-RT1/-ST1) NPN General Purpose Amplifier Transistors Surface Mount Current Gain(1) (VCE = 10 Vdc, IC = 2.0 mAdc) (VCE = 2.0 Vdc, IC = 100 mAdc) Collector –Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) 1. Pulse Test: Pulse Width ≤ 300 µs, D.C. ≤ 2%. MSD601 –RT1 MSD601 –ST1 Symbol V(BR)CEO V(BR)CBO V(BR)EBO I |
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Motorola |
Dual Diode Common Anode as follows: PD = 1.0 W @ TC = 25°C, Derate above 8.0 mW/°C, PD = 10 W @ TC = 25°C, Derate above 80 mW/°C, TJ, Tstg = –55 to +150°C, θJC = 12.5°C/W, θJA = 125°C. Motorola Small –Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 |
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Motorola |
PNP Silicon Driver Transistors = GLP THERMAL CHARACTERISTICS Rating Power Dissipation TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature Range Symbol PD(1) Max 225 1.8 RθJA TJ Tstg 556 150 – 55 ~ + 150 Unit mW mW/°C °C/W ° |
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Motorola |
DUAL DIODE COMMON CATHODE |
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Motorola |
NPN GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS SURFACE MOUNT TER ELECTRICAL CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 µAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 100 µAdc, IE = 0) Collector-Base Cutoff Current ( |
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Desde 2024. D4U Semiconductor.
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